Silicon-based power transistors are reaching limits of operating frequency, breakdown voltage and power density in the power electronics industry and GaN’s performance is beginning to shine. By no means is silicon going extinct, but energy requirements are continuing to increase, thereby requiring new methods and materials to be investigated/used to meet these demands.
Excellent characteristics for a power device
|Peak electron velocity||x107cm/s||2.1||1.0||2.0|
|Critical electric field||MV/cm||3.0||0.3||3.0|
|Thermal conductivity||W/cm * K||>1.5||1.5||4.5|
|Relative dielectric constant||er||9.0||11.8||10.0|
Benefits of high voltage, low loss, high-speed GaN-on-Si switches
Built on an industry-leading IP portfolio and over 300 years of combined GaN engineering expertise, Transphorm is delivering high performance with the highest quality and reliability GaN devices and best-in-class applications-driven design support to a growing customer base.
Transphorm has more experience than any other manufacturer qualifying GaN products, our supply chain is up to the task and our reliability data is always generated from randomly-sampled production material.
Normally-off/Cascode – Normally-off devices are considered safer than normally-on and Transphorm pairs its normally-on, high-voltage GaN FET with a normally-off, low-voltage Si MOSFET. This creates a hybrid device that is normally-off and is compatible with Si drivers for added ease of use. This results in an overall fast-switching device with a low conduction, switching and output losses. One important advantage of a Cascode switch is that no special driver is required.
|Vgs for fully on (V)||Max. Vgs rating (V)||Safety Margin (V)|
Transphorm 600V GaN Outperforms Si Superjunction
Superjunction MOSFET vs TPH3006PS: Reduced driving loss, switching loss and reverse recovery loss
|Rds (on) (25⁰C)||0.14/0.16Ω||0.15/0.18Ω|
|Dynamic||Co(er)||66pF ||56pF |
|Co(tr)||314pF ||110pF |
|Drain to Source Body Diode Characteristics||Qrr||8200nC ||54nC |
|trr||460ns ||30ns |
 Vgs = 0V, Vds = 0 – 480V
 Vds = 400V, Ids = 11.3A, di/dt = 100A/µs
 Vds = 480V, Ids = 9A, di/dt = 450A/µs