The TPH3202LD and TPH3202LS 600V 290mΩ Gallium Nitride (GaN) FETs are normally-off devices. They combine state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TPH3202L Series is offered in an industry-standard 8mm x 8mm PQFN with common drain (LD) and common source (LS) package configurations.
|VDS (V) min||600|
|V(TR)DSS (V) max||750|
|RDS(on) (mΩ) max*||350|
|QRR (nC) typ||29|
|QG (nC) typ||6.2|
AN0009: Recommended External Circuitry for Transphorm GaN FETs
AN0008: Drain Voltage and Avalanche Ratings for GaN FETs
AN0002: Characteristics of Transphorm GaN Power FETs
AN0003: Printed Circuit Board Layout and Probing for GaN FETs
AN0004: Designing Hard-switched Bridges with GaN
AN0006: VGS Transient Tolerance of Transphorm GaN FETs
AN0007: PQFN88 Lead-free 2nd Level Soldering Recommendations for Vapor Phase Reflow
Transphorm offers a number of GaN evaluation kits in various topologies, providing an easy-to-use platform to investigate the benefits of GaN.