TPH3205WSB

650V 52mΩ Cascode GaN FET in TO-247

The TPH3205WSB 650V 52mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge, faster switching speeds, and smaller reverse recovery charge, delivering significant advantages over traditional silicon (Si) devices. The TPH3205WSB is offered in an industry-standard 3 lead TO-247 with a common source package configuration.

Key Specifications
VDS (V) min 650
VTDS (V) max 800
RDS(on) (mΩ) max* 63
Qrr (nC) typ 136
Qg (nC) typ 28
*Dynamic R(on)

 

TDPS2800E2C1-KIT evaluation platform for 2.8kW totem-pole PFC

Output Power (W)

Output Power (W)

Key Features

  • Easy to drive—compatible with standard gate drivers
  • Low conduction and switching losses
  • Low Qrr of 136nC—no free-wheeling diode required
  • GSD pin layout improves high speed design
  • JEDEC-qualified GaN technology
  • RoHS compliant and Halogen-free

Key Benefits

  • Enables more efficient topologies—easy to implement bridgeless totem-pole designs
  • Increased efficiency through fast switching
  • Increased power density
  • Reduced system size and weight
  • Lower BOM cost

Buy Now

All Transphorm devices are available through Digi-Key:

TPH3205WSB 650V Cascode GaN FET in TO-247 (source tab)

Evaluation Kits

Transphorm offers a number of GaN evaluation platforms in various topologies. The evaluation kits below feature the TPH3205 GaN FET:

TDPS2800E2C1-KIT evaluation platform for 2.8kW totem-pole PFC

TDPS2800E2C1-KIT for 2.8kW totem-pole PFC

TDPS3500E0E10-KIT evaluation platform for 3.5kW hard-switched half-bridge, buck, or boost

TDPS3500E0E10-KIT for 3.5kW hard-switched half-bridge, buck, or boost