600V 150mΩ Cascode GaN FET in PQFN88

The TPH3206LD 600V 150mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge, faster switching speeds, and smaller reverse recovery charge, delivering significant advantages over traditional silicon (Si) devices. The TPH3206LD is offered in an industry-standard 8 x 8mm PQFN with a common drain package configuration.

Key Specifications
VDS (V) min 600
VTDS (V) max 750
RDS(on) (mΩ) max* 180
Qrr (nC) typ 54
Qg (nC) typ 6
*Dynamic R(on)


TDPV1000E0C1-KIT evaluation platform for 1kW inverter - Transphorm GaN FET

Output Power (W)

Output Power (W)

Key Features

  • Easy to drive—compatible with standard gate drivers
  • Low conduction and switching losses
  • Low Qrr of 54nC—no free-wheeling diode required
  • JEDEC-qualified GaN technology
  • RoHS compliant and Halogen-free

Key Benefits

  • Enables more efficient topologies—easy to implement bridgeless totem-pole designs
  • Increased efficiency through fast switching
  • Increased power density
  • Reduced system size and weight
  • Lower BOM cost

Buy Now

All Transphorm devices are available through Digi-Key:

TPH3206LD 600V Cascode GaN FET in PQFN88 (drain tab)

Evaluation Kits

Transphorm offers a number of GaN evaluation platforms in various topologies. The evaluation kits below feature the TPH3206 GaN FET:

TDPS500E2C1-KIT evaluation platform for 1kW totem-pole PFC - Transphorm GaN FET

TDPS500E2C1-KIT for 1kW totem-pole PFC

TDPV1000E0C1-KIT evaluation platform for 1kW inverter - Transphorm GaN FET

TDPV1000E0C1-KIT for 1kW inverter