600V 150mΩ GaN FET in TO-220

The TPH3206PD 600V 150mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge, faster switching speeds, and smaller reverse recovery charge, delivering significant advantages over traditional silicon (Si) devices. The TPH3206PD is offered in an industry-standard 3 lead TO-220 with a common drain package configuration.

Key Specifications
VDS (V) min 600
VTDS (V) max 750
RDS(on) (mΩ) max* 180
Qrr (nC) typ 54
Qg (nC) typ 6
*Dynamic R(on)

Output Power (W)

Output Power (W)

Key Features

  • Easy to drive—compatible with standard gate drivers
  • Low conduction and switching losses
  • Low Qrr of 54nC—no free-wheeling diode required
  • GSD pin layout reduces RF loop inductance
  • JEDEC-qualified GaN technology
  • RoHS compliant and Halogen-free

Key Benefits

  • Enables more efficient topologies—easy to implement bridgeless totem-pole designs
  • Increased efficiency through fast switching
  • Increased power density
  • Reduced system size and weight
  • Lower BOM cost

Buy Now

All Transphorm devices are available through Digi-Key:

TPH3206PD 600V GaN FET in TO-220 (drain tab)

Evaluation Kits

Transphorm offers a number of GaN evaluation platforms in various topologies. The evaluation kit below features the TPH3206 GaN FET:

TDINV1000P100-KIT for 1kW inverter