TPH3207WS

650V 35mΩ GaN FET in TO-247

The TPH3207WS 650V 35mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge, faster switching speeds, and smaller reverse recovery charge, delivering significant advantages over traditional silicon (Si) devices. The TPH3207WS is offered in an industry-standard 3 lead TO-247 with a common source package configuration.

Key Specifications
VDS (V) min 650
VTDS (V) max 800
RDS(on) (mΩ) max* 41
Qrr (nC) typ 175
Qg (nC) typ 28
*Dynamic R(on)

TDTTP4000W066-KIT evaluation platform for 4kW totem-pole PFC - Transphorm GaN FET

Output Power (W)

Output Power (W)

Key Features

  • Easy to drive—compatible with standard gate drivers
  • Low conduction and switching losses
  • Low Qrr of 175nC—no free-wheeling diode required
  • GSD pin layout reduces RF loop inductance
  • JEDEC-qualified GaN technology
  • RoHS compliant and Halogen-free

Key Benefits

  • Enables more efficient topologies—easy to implement bridgeless totem-pole designs
  • Increased efficiency through fast switching
  • Increased power density
  • Reduced system size and weight
  • Lower BOM cost

Buy Now

All Transphorm devices are available through Digi-Key:

TPH3207WS 650V GaN FET in TO-247 (source tab)

Evaluation Kits

Transphorm offers a number of GaN evaluation platforms in various topologies. The evaluation kits below feature the TPH3207 GaN FET:

TDTTP4000W066-KIT evaluation platform for 4kW totem-pole PFC - Transphorm GaN FET

TDTTP4000W066-KIT for 4kW totem-pole PFC

TDINV4500W050-KIT evaluation platform for 4.5kW inverter - Transphorm GaN FET

TDINV4500W050-KIT for 4.5kW inverter