TransphormHighest Performance, Highest Reliability GaN

TPH3212PS

650V 72mΩ GaN FET in TO-220

The TPH3212PS 650V 72mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

The TPH3212PS is offered in an industry-standard 3 lead TO-220 with a common source package configuration.

Key Specifications
VDS (V) min 650
V(TR)DSS (V) max 800
RDS(on)eff (mΩ) max* 85
QRR (nC) typ 90
QG (nC) typ 14
*Reflects both static and dynamic on-resistance

Key Features

  • JEDEC-qualified GaN technology
  • Dynamic RDS(on)eff production tested
  • Robust design, defined by
    • Intrinsic lifetime tests
    • Wide gate safety margin
    • Transient over-voltage capability
  • Very low QRR
  • Reduced crossover loss
  • RoHS-compliant and Halogen-free packaging

Key Benefits

  • Enables AC-DC bridgeless totem-pole PFC designs
    • Increased power density
    • Reduced system size and weight
    • Overall lower system cost
  • Achieves increased efficiency in both hard- and soft-switched circuits
  • Easy to drive with commonly-used gate drivers
  • GSD pin layout improves high speed design

Output Power (W)

Output Power (W)

Application Notes

AN0010: GaN FETs in Parallel Using Drain Ferrite Beads and RC Snubbers for High-power Applications
AN0009: Recommended External Circuitry for Transphorm GaN FETs
AN0008: Drain Voltage and Avalanche Ratings for GaN FETs
AN0002: Characteristics of Transphorm GaN Power FETs
AN0003: Printed Circuit Board Layout and Probing for GaN FETs
AN0004: Designing Hard-switched Bridges with GaN
AN0006: VGS Transient Tolerance of Transphorm GaN FETs

Design Guides

DG004: Multi-pulse Testing for GaN Layout Verification | DG004 DSP Code
DG005: Ultrafast Overcurrent Breaker Circuit for Prototyping | DG005 Design Files

Evaluation Kits

Transphorm offers a number of GaN evaluation kits in various topologies, providing an easy-to-use platform to investigate the benefits of GaN, including the TDHBG2500P100-KIT 2.5kW half-bridge buck or boost featuring TPH3212PS.

Buy Now

All Transphorm devices and evaluation kits are available through Digi-Key.

  • TPH3212PS 650V GaN FET in TO-220 (source tab)
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