TransphormHighest Performance, Highest Reliability GaN

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Discretes
600V
R(on) (mΩ) (max) TO-220 (Drain Tab) TO-220 (Source Tab) TO-247 (Source Tab) PQFN88 (Drain Tab) PQFN88 (Source Tab)
350 TPH3202PD
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TPH3202PS
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TPH3202LD
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TPH3202LS
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180 TPH3206PD
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TPH3206PS
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TPH3206LD
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TPH3206LS
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TPH3206LDG*
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Discretes
650V
R(on) (mΩ) (max) TO-220 (Drain Tab) TO-220 (Source Tab) TO-247 (Source Tab) PQFN88 (Drain Tab) PQFN88 (Source Tab)
130 TPH3208PS
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TPH3208LD
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TPH3208LS
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TPH3208LDG*
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85 TPH3212PS
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63 TPH3205WSB
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41 TPH3207WS
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Module
600V
R(on) (mΩ) (max) Description Device
34 Half-bridge Module TPD3215M
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*Offers larger gate pad

Products with markings referencing this web page are subject to one or more patents listed in Exhibit A and/or one or more of the patents listed in Exhibit B

GaN Efficiency

Need for speed—GaN operates at higher frequencies with up to 4x faster switching to lower crossover losses and increase system efficiency

Feel the power—GaN in a totem-pole configuration lowers component count and EMI filter size to deliver the same power in a smaller footprint

Smaller, lighter, cooler—Higher efficiency and increased power density means lower overall system cost

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