TransphormHighest Performance, Highest Reliability GaN

650V GaN FETs

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Part Number Vds (V) min Rds(on) (mΩ) typ Rds(on) (mΩ) max Id (25°C) (A) max Package Package Variation Datasheet Buy Now
TPH3207WS 650 35 41 50 TO-247 Common Source Datasheet Buy Now
TPH3205WSB 650 49 60 35 TO-247 Common Source Datasheet Buy Now
TPH3205WSBQA 650 49 62 35 TO-247 Common Source Datasheet Buy Now
TPH3212PS 650 72 85 26 TO-220 Common Source Datasheet Buy Now
TPH3208PS 650 110 130 20 TO-220 Common Source Datasheet Buy Now
TPH3208PD 650 110 130 20 TO-220 Common Drain Datasheet Buy Now
TPH3208LD 650 110 130 20 PQFN Common Drain Datasheet Buy Now
TPH3208LDG 650 110 130 20 PQFN Common Drain Datasheet Buy Now
TPH3208LS 650 110 130 20 PQFN Common Source Datasheet Buy Now
TPH3206LDB 650 150 180 16 PQFN Common Drain Datasheet Buy Now
TPH3206LSB 650 150 180 16 PQFN Common Source Datasheet Buy Now
TPH3206LDGB 650 150 180 16 PQFN Common Drain Datasheet Buy Now
TPH3206PSB 650 150 180 16 TO-220 Common Source Datasheet Buy Now

Products with markings referencing this web page are subject to one or more patents listed in Exhibit A and/or one or more of the patents listed in Exhibit B

GaN Efficiency

Need for speed—GaN operates at higher frequencies with up to 4x faster switching to lower crossover losses and increase system efficiency

Feel the power—GaN in a totem-pole configuration lowers component count and EMI filter size to deliver the same power in a smaller footprint

Smaller, lighter, cooler—Higher efficiency and increased power density means lower overall system cost

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