TransphormHighest Performance, Highest Reliability GaN

Introducing the Gen III PQFN88 FETs

• Source and Drain tabs
• 72 mΩ on-resistance
• ± 20 V gate robustness
• 4 V threshold

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Webinar

Understanding High Voltage
GaN FET Quality + Reliability

Available on Demand

Register

Now Sampling: TP90H050WS

900 Volt, Gen III GaN FET

• 1000 V transient rating
• 8 kW output in a half bridge topology
• 50 mOhm typical on-resistance

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Wentai’s New Titanium Power Supply

1.6 kW GaN ATX PC Gaming PSU

• 20% power density increase
• ~95% efficiency at 50% full load
• Fully modular, low noise

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Transphorm:
The Highest Quality GaN FETs
Powering Next Gen
Power Adapters

Offered at 175°C

Introducing Gen III AEC-Q101 Qualified GaN FETs

• 4 V threshold
• ±20 V gate robustness
• 2nd auto-qualified device

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TDK’s New AC-DC 504 W Power Supply

Smaller. More efficient. Different.

Designed for harsh environments

• 5% efficiency increase
• 30% increase in power density (100 W/in3)
• Runs 30% cooler
• Transphorm's quality and reliability

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Transphorm.

• Over a quarter of a million devices shipped
• Over 1.3 billion field hours of operation realized
• High volume scalability available

The GaN Revolution is here.

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An Extreme Generator
Powered by Extreme Tech

The Kodiak Extreme: The first portable solar-powered
generator built with GaN.

• 33% more power
• 98% inverter efficiency
• Fast charging
• Water-resistant

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Visit Inergy

Smaller Power Systems
Bigger Power Supply Benefits

Delta’s 800W server PSU uses GaN to:

• Reduce system size
• Integrate a backup battery
• Maintain same CRPS form factor

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Quality & Reliability

IN PRODUCTION TICKER

Transphorm Wire

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Press ReleaseSep 17 2019Transphorm and Mouser Electronics Announce Global Distribution AgreementPress ReleaseSep 11 2019Transphorm Adds Two More GaN FETs to Its Gen III Product LinePress ReleaseJul 30 2019Transphorm Announces $18.5 Million Contract from Office of Naval Research to Establish Domestic Source of Gallium Nitride Epiwafers
Press ReleaseJul 18 2019Transphorm Webinar: Understanding the Quality + Reliability of High Voltage GaN FETs in Power ApplicationsIn the NewsJul 8 2019Transphorm introduces second 900 V GaN FET for three-phase applicationsPress ReleaseJun 25 2019Transphorm Strengthens 900 V GaN Portfolio with Second FET
Press ReleaseMay 28 2019Transphorm’s Gen III JEDEC-Qualified GaN to Power Wentai’s New 1.6 kW Titanium ATX PC Gaming Power SupplyIn the NewsApr 23 2019PSDcast – Addressing GaN’s MythsPress ReleaseApr 23 2019Transphorm Centers on the Simplicity and Reliability of High Voltage GaN Application Development at PCIM 2019
EventApr 17 201913th Topical Workshop on Heterostructure MicroelectronicsEventApr 15 2019IEEE Energy Conversion Congress & Expo (ECCE) 2019In the NewsApr 9 2019Review: Ultra-high power, ultra-high efficiency GaN FET-based 4kW totem pole PFC power supply evaluation board TDTTP4000W066B (Chinese)
In the NewsApr 5 2019PSDtv: Transphorm on Why GaN Devices are in Production at APEC 2019Executive CommentaryApr 4 2019APEC Insight: GaN is Here and NowIn the NewsApr 1 2019High Voltage GaN Switch Reliability
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Transphorm prioritizes Quality + Reliability. To ensure our Q+R, we innovate at each stage within the FET development process—design, fabrication, device, and application support. The result? Customers produce groundbreaking, high performing GaN-based products that reimagine what’s possible with power. Welcome to the GaN Revolution.