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GaN Market Leadership Continues
Over 1 Million
GaN FETs Shipped
- Powering adapters and fast chargers
- Manufacturing in high volumes
- Driven by SuperGaN® advantages
Second Evaluation Board with Microchip Support
2.5 kW Bridgeless Totem-pole PFC Board
With Microchip’s dsPIC®
- Swappable daughter card for 50 mΩ
or 72 mΩ FET evaluation - Pre-programmed firmware
- Microchip dev tools, global support access
Introducing the TP65H035G4WSQA FET
SuperGaN®Gen IV Device
Now Automotive Qualified
• 650 V 35 mΩ FET
• Qualified up to 175°C
• Thermally superior TO-247 package
New Evaluation Board & Development Kit
130W ACF SuperGaN®
USB-C PD Adapter
• SuperGaN® FETs with Diodes Inc. ACF Controllers
• PPS fast charging supported
• High power peak efficiency: > 93.5%
• Full load efficiency: 91.4% @ 90 Vac
SuperGaN® Design Innovation
Qualcomm Quick Charge 5
Compliant Adapter.
• 100 W USB-C PD PPS charger
• 0 to 50% charge in 5 minutes
• Used in both AC to DC (PFC) and DC to DC (QRF) topologies
Head-to-head comparison
Datasheets don’t tell
the whole story.
• SuperGan FET vs. e-mode FET
• 65 W USB PD charger application
• SuperGaN: higher efficiency, lower losses
No Two Wide Bandgap
Technologies Are The Same.
- Greater Efficiency
- Higher Power Operation
- Lower Switching Losses
- Lower Temperature Operation
Six Server Power Supplies, One GaN Platform
Bel Power’s Titanium
TET Series Family
for Data Centers
• 1.5 – 3.2 kW product options
• > 96% efficiency (≥ 99% PFC efficiency)
• 31.7 – up to 62 W/in3 power density
New Evaluation Board
4 kW Bridgeless Totem-pole PFC Board
With Microchip’s dsPIC®
• > 99% efficiency
• Pre-programmed firmware
• Microchip dev tools, global support access
IN PRODUCTION TICKER
Transphorm Wire
Press ReleaseJan 12 2022Transphorm Ships Over One Million GaN Devices for Fast Chargers and Power Adapters in December 2021Press ReleaseJan 6 2022Transphorm to Present at the Needham Growth Conference on January 12Press ReleaseDec 13 2021Transphorm Closes $12.9 Million Non-Brokered Private Placement of Common Stock
Press ReleaseDec 9 2021Transphorm Co-Founder and CTO Umesh Mishra Awarded IEEE Jun-ichi Nishizawa MedalPress ReleaseDec 7 2021Transphorm to Present at the Oppenheimer 5G Summit on December 14NewsNov 30 2021The Short-Circuit Current Limiter for GaN FETs: Delivering Higher Short-Circuit Capability Without Compromising Performance
Press ReleaseNov 30 2021Transphorm Releases Second Totem Pole Evaluation Board with Microchip’s Digital Signal Processing TechnologyNewsNov 11 2021Transphorm’s SuperGaN Gen IV Multi-Kilowatt Class Power FET Earns Automotive QualificationNewsNov 11 2021Sino-American Silicon Products (SAS) invests $15 million to Transphorm