It’s the metric most often missing in GaN reliability reports.
Don’t risk your reputation on incomplete data.
Know what to ask for. Know what it means.
• 1.5 – 3.2 kW product options
• > 96% efficiency (≥ 99% PFC efficiency)
• 31.7 – up to 62 W/in3 power density
• Field Reliability Rate: < 1 FIT
• Early Life Failure Rate: < 1 FIT
• Field Operation Hours: > 10B
• Gen IV GaN platform
• +/- 20 V gate robustness*
• 4 V threshold*
*35 mΩ FET ratings; 240 mΩ FET also available
• > 99% efficiency
• Pre-programmed firmware
• Microchip dev tools, global support access
• Suitable for Standard CCM Boost topology
• > 99% efficient SuperGaN™ 650 V FETs
• Simpler power system design
• 10% more efficient than competition
• 3 lbs product weight
• Airbus A318-A321, A330, A340, A380
• Boeing B767, B787 VIP
• 98% efficiency
• 42 V to 58 V power output
• Swappable with standardly configured modules
IN PRODUCTION TICKER
Transphorm prioritizes Quality + Reliability. To ensure our Q+R, we innovate at each stage within the FET development process—design, fabrication, device, and application support. The result? Customers produce groundbreaking, high performing GaN-based products that reimagine what’s possible with power. Welcome to the GaN Revolution.