TransphormHighest Performance, Highest Reliability GaN

Increased Performance, Same Trusted Reliability

Introducing SuperGaN™ Power FETs

• Gen IV GaN platform
• +/- 20 V gate robustness*
• 4 V threshold*

*35 mΩ FET ratings; 240 mΩ FET also available

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New Evaluation Board

4 kW Bridgeless Totem-pole PFC Board
With Microchip’s dsPIC®

• > 99% efficiency
• Pre-programmed firmware
• Microchip dev tools, global support access

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HZZH’s Flagship 3 kW ZHR483KS

Telecom’s Ultra-Efficient
GaN Power Module

• 98% efficiency
• 42 V to 58 V power output
• Swappable with standardly configured modules

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Aviation’s First Passively Cooled
(Fanless) 420 W Power Supply

AES’ PS250X PSU

• 10% more efficient than competition
• 3 lbs product weight
• Airbus A318-A321, A330, A340, A380
• Boeing B767, B787 VIP

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Aviation’s Most Efficient
1200 W Power Supply

AES’ PS6120

• 11.5% more efficient than competition
• 8.8 lbs product weight
• Airbus A318-A321, A330, A340, A380
• Boeing B767, B787 VIP

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Transphorm:
The Highest Quality GaN FETs
Powering Next Gen
Power Adapters

Offered at 175°C

Introducing Gen III AEC-Q101 Qualified GaN FETs

• 4 V threshold
• ±20 V gate robustness
• 2nd auto-qualified device

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Quality & Reliability

IN PRODUCTION TICKER

Transphorm Wire

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Press ReleaseApr 14 2020Transphorm Introduces SuperGaN™ Power FETs with Launch of Gen IV GaN PlatformPress ReleaseApr 6 2020Transphorm and Microchip Combine High Reliablity GaN and Digital Signal Processing Technology to Drive GaN AdoptionPress ReleaseMar 17 2020Transphorm’s GaN Used in HZZH’s 98 Percent Efficient Power Module
NewsMar 4 2020Marelli Boosts Investment in Electric Vehicle Technologies Through Partnership With Us Technology Firm, Transphorm Inc.Press ReleaseMar 3 2020Transphorm Inc. Raises $21 Million and Completes Reverse MergerNewsMar 2 2020GaN Type Determines Design Benefits
NewsFeb 28 2020Transphorm to Showcase Broad Market Adoption of High Voltage GaN Power at APEC 2020NewsFeb 28 2020Transphorm showcasing market adoption of high-voltage GaN power at APECNewsFeb 25 2020Nexperia Partners with Ricardo to Develop Gallium Nitride Based EV Inverter Design
NewsFeb 13 2020Transphorm to show Adoption of High Voltage GaN at APEC 2020 – NewsPress ReleaseFeb 12 2020Transphorm to Showcase Broad Market Adoption of High Voltage GaN Power at APEC 2020NewsFeb 5 2020Power Supplies and Snubber Caps
NewsJan 10 2020Power GaN achieves its first milestoneNewsJan 8 2020New Semiconductor Technologies Driving Down Cost Of Electric Vehicle BatteriesNewsDec 26 2019GaN Used in Power Supplies for Large Passenger Airplanes
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Transphorm prioritizes Quality + Reliability. To ensure our Q+R, we innovate at each stage within the FET development process—design, fabrication, device, and application support. The result? Customers produce groundbreaking, high performing GaN-based products that reimagine what’s possible with power. Welcome to the GaN Revolution.