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High Voltage GaN Devices You Can Trust
Industry-Leading GaN Reliability
• Field Reliability Rate: < 1 FIT
• Early Life Failure Rate: < 1 FIT
• Field Operation Hours: > 10B
MarketIncreased Performance, Same Trusted Reliability
Introducing SuperGaN™ Power FETs
• Gen IV GaN platform
• +/- 20 V gate robustness*
• 4 V threshold*
*35 mΩ FET ratings; 240 mΩ FET also available
New Evaluation Board
4 kW Bridgeless Totem-pole PFC Board
With Microchip’s dsPIC®
• > 99% efficiency
• Pre-programmed firmware
• Microchip dev tools, global support access
TDTTP4000W065AN Evaluation Board
GaN Using Analog Control
for Bridgeless Totem-pole PFC
• Suitable for Standard CCM Boost topology
• > 99% efficient SuperGaN™ 650 V FETs
• Simpler power system design
Aviation’s First Passively Cooled
(Fanless) 420 W Power Supply
AES’ PS250X PSU
• 10% more efficient than competition
• 3 lbs product weight
• Airbus A318-A321, A330, A340, A380
• Boeing B767, B787 VIP
HZZH’s Flagship 3 kW ZHR483KS
Telecom’s Ultra-Efficient
GaN Power Module
• 98% efficiency
• 42 V to 58 V power output
• Swappable with standardly configured modules
IN PRODUCTION TICKER
Transphorm Wire
NewsNov 12 2020Transphorm’s Q3 revenue almost doubles year-on-yearPress ReleaseNov 11 2020Transphorm to Participate at Upcoming November Financial ConferencesPress ReleaseNov 10 2020Transphorm Reports Third Quarter 2020 Results and Continued Progress Across Business
NewsNov 6 2020As Mission-Critical Applications Boom, Reliability Engineering is More Important Than EverNewsNov 5 2020Improved reliability in power GaN will further drive its market growth – An interview with TransphormPress ReleaseOct 29 2020Transphorm to Announce Third Quarter 2020 Financial Results on November 10, 2020
Press ReleaseOct 29 2020Transphorm Releases Latest High Voltage GaN Reliability DataPress ReleaseOct 26 2020Transphorm President & Co-Founder, Dr. Primit Parikh, Interviewed by The Wall Street ResourcePress ReleaseOct 20 2020Transphorm Appoints Dr. Julian Humphreys to Board of Directors