TransphormHighest Performance, Highest Reliability GaN

Overview

Welcome to the GaN Revolution!

Transphorm is a global semiconductor company, leading the GaN Revolution with the highest performance, highest reliability GaN devices for high voltage power conversion applications. To ensure this, Transphorm deploys its unique vertically-integrated business approach that leverages the industry’s most experienced GaN engineering team at every development stage: design, fabrication, device and application support. This approach, backed by one of the industry’s largest IP portfolios with over 600 patents, has yielded the industry’s only JEDEC- and AEC-Q101-qualified GaN FETs. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost—and here’s how we do it.

Transphorm is dedicated to educating and supporting customers developing with high voltage GaN. Let us know how we can help you!

Since its founding in 2007, Transphorm has achieved a number of milestones and industry firsts.

2009

First samples of 600V GaN-on-SiC with no current collapse/dynamic Ron

2010

First 600V GaN-on-Si

2012

First JEDEC qualified high voltage GaN

2013

IP and manufacturing partnership with Fujitsu Semiconductor Japan

2014

First generation GaN products in production
First customers in production

2015

First long-term intrinsic lifetime testing for GaN established

2016

Second generation GaN products in production

2016

Silicon Valley Center of Excellence established
Customers delivering industry-first products and systems with GaN

2017

First automotive (AEC-Q101) qualified GaN

2018

Third generation GaN products in production

Management

Mario Rivas
CEO

Umesh Mishra, Ph.D.
CTO & Co-Founder

Primit Parikh, Ph.D.
COO & Co-Founder

Yifeng Wu, Ph.D.
Senior VP, Engineering

Cameron McAulay
CFO

Philip Zuk
VP Technical Marketing

Marc Murphy
VP World Wide Sales

Randy Berg
Human Resources Leader

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