TransphormHighest Performance, Highest Reliability GaN


Half-bridge Daughter Card Power Stage used in the Synchronous Buck or Boost Evaluation Platform (TDHBG1200DC100-KIT)

The TDHB-65H070L-DC half-bridge power stage daughter card provides the elements for basic study of switching characteristics and efficiency achievable with Transphorm’s 650V GaN FETs. It is also part of the evaluation board (TDHBG1200DC100-KIT) and can operate in either synchronous boost or buck mode with a high-voltage input and output of up to 400Vdc, with a power output of up to 1.2 kW.


  • Power: 1.2 kW (TDHBG1200DC100-KIT)
  • Switching frequency: 50kHz-300kHz (variable)
  • Features TP65H070L
  • Easy-to-use platform to investigate GaN


  • Synchronous buck
  • Synchronous boost
  • Hard-switched half-bridge


Typical Performance Curves

Output Power (W)

Output Power (W)


Application Notes

AN0010: GaN FETs in Parallel Using Drain Ferrite Beads and RC Snubbers for High-power Applications
AN0009: Recommended External Circuitry for Transphorm GaN FETs
AN0008: Drain Voltage and Avalanche Ratings for GaN FETs
AN0002: Characteristics of Transphorm GaN Power FETs
AN0003: Printed Circuit Board Layout and Probing for GaN FETs
AN0004: Designing Hard-switched Bridges with GaN
AN0006: VGS Transient Tolerance of Transphorm GaN FETs

Design Guides

DG001: LLC Resonant Tank Design for 3.3kW Electric Vehicle On-board Charger with Wide-range Output Voltage
DG002: 2.3kW High-efficiency 2-phase CRM Boost Converter for Solar Inverters
DG004: Multi-pulse Testing for GaN Layout Verification (and DSP Code)
DG005: Ultrafast Overcurrent Breaker Circuit for Prototyping (and Design Files)

TP65H070L Datasheet

Simulation Models

TP65H070L SPICE model

Complete Design Files

Download all design files (zip)


Download schematic (.sch) file (zip)
Download schematics (pdf)

Gerber Files

Download gerber files (zip)

Select your preferred supplier:

Order from Digi-Key           Order from Mouser

Back to top