TransphormHighest Performance, Highest Reliability GaN


1.2 kW Half-bridge Synchronous Buck or Boost Evaluation Platform with Power Stage Daughter Card (TDHB-65H070L-DC)

The TDHBG1200DC100 1.2 kW half-bridge evaluation board provides the elements of a simple buck or boost converter for basic study of switching characteristics and efficiency achievable with Transphorm’s 650V GaN FETs. In either buck or boost mode the circuit can be configured for synchronous rectification and the high-voltage input and output can operate at up to 400Vdc, with a power output of up to 1.2 kW. The TDHBG1200DC100-KIT is for evaluation purposes only.


  • Power: 1.2 kW
  • Switching frequency: 50kHz-300kHz (variable)
  • Features TP65H070L
  • Easy-to-use platform to investigate GaN


  • Synchronous buck
  • Synchronous boost
  • Hard-switched half-bridge


Typical Performance Curves

Output Power (W)

Output Power (W)


Application Notes

AN0010: GaN FETs in Parallel Using Drain Ferrite Beads and RC Snubbers for High-power Applications
AN0009: Recommended External Circuitry for Transphorm GaN FETs
AN0008: Drain Voltage and Avalanche Ratings for GaN FETs
AN0002: Characteristics of Transphorm GaN Power FETs
AN0003: Printed Circuit Board Layout and Probing for GaN FETs
AN0004: Designing Hard-switched Bridges with GaN
AN0006: VGS Transient Tolerance of Transphorm GaN FETs

Design Guides

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DG002: 2.3kW High-efficiency 2-phase CRM Boost Converter for Solar Inverters
DG004: Multi-pulse Testing for GaN Layout Verification (and DSP Code)
DG005: Ultrafast Overcurrent Breaker Circuit for Prototyping (and Design Files)

TP65H070L Datasheet

Simulation Models

TP65H070L SPICE model

Complete Design Files

Download all design files (zip)


Download schematic (.sch) file (zip)
Download schematics (pdf)

Gerber Files

Download gerber files (zip)

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