TransphormHighest Performance, Highest Reliability GaN

 

Revolution
noun:  rev·o·lu·tion  \ˌre-və-ˈlü-shən\

  • a changeover in use or preference especially in technology 
  • a fundamental change in the way of thinking about or visualizing something

Power efficiency is a cause worth fighting for and incumbent technologies such as silicon have reached their performance limits.

Enter gallium nitride (GaN)

The wide-bandgap semiconductor material that achieves performance never before possible.

Faster   Cooler   Smaller

JEDEC and AEC-Q101 qualified high voltage GaN devices in a range of power levels are available. Groundbreaking end systems built on GaN are in production.

The GaN Revolution has begun

We aim to elevate the revolutionaries—the pioneers, creative thinkers, problem solvers—by sharing their discoveries and designs to help others learn about GaN. And look to inspire others to give rise to new innovations defining next generation power electronics.

Transphorm is leading the GaN Revolution, with innovations that are moving power electronics beyond the limitations of silicon:

99% efficiency
40% more power density
20% lower system cost

GaN in Production

Meet some of the Revolutionaries inspired to create innovative systems using Transphorm GaN. How can we help you develop groundbreaking products?

                               Seasonic

 

Applications

Transphorm offers a number of design resources is dedicated to educating and supporting our customers develop their systems with high voltage GaN and. Let us know how we can help you design high power applications with GaN.

 

Telecom/Industrial

Power supplies
GaN delivers the ability to double available power in standardized server and telecom form factors.

Renewable Energy

Solar inverters
Reduce energy losses by up to 40%-50%, with a significantly smaller and lighter PV inverter.

 

Automotive

EV and charging
With the industry’s only AEC-Q101 qualified GaN, size and weight reduction translating to longer distance per charge and lower system cost is becoming a reality.

The TPH3205WSBQA targets on-board charger (OBC) and DC to DC systems for plug-in hybrid electric vehicles (PHEVs) and battery electric vehicles (BEV). Today OBCs are uni-directional (AC to DC) using standard boost topologies; however, since GaN FETs are bi-directional by nature, they become the perfect fit for the bridgeless totem-pole power factor correction (PFC) topology. Meaning, a bi-directional OBC can then be designed with GaN to reduce the number of Si devices, weight and overall system cost.

Industrial

Motor drives/servo
Servo motors using GaN enable several system benefits including higher efficiency, smaller core devices, size reduction, less wiring, and lower ambient noise.

 

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