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Events
Center for High Performance Power Electronics
Ohio, U.S.A. | November 17, 2019
Speaking Engagement
Date: Sunday, November 17
Tutorial: GaN Reliability
Speaker: Ron Barr, VP of Quality, Reliability and Analytics
Time: 4:00 p.m. - 5:30 p.m.
Louisiana, U.S.A. | March 15 - 19, 2020
Monday, March 16 to Wednesday, March 18
Visit us at the Transphorm Booth: 1514
Speaking Engagements
TBD
For additional event information, visit here.
North Carolina, U.S.A. | October 29 - October 31, 2019
Speaking Engagements/Presentations
Date: Tuesday, October 29
Tutorial: Best Practices Using Voltage Acceleration to Determine Device Reliability in High Voltage GaN
Speaker: Ron Barr, VP of Quality, Reliability and Analytics
Time: 2:20 p.m. - 3:40 p.m.
Date: Wednesday, October 30
Poster Session: High Voltage GaN Power Switch Reliability & Robustness
Authors: Feng Qi, Zhan Wang, Yifeng Wu
Time: 5:30 p.m. - 7:30 p.m.
GaN Applications
Poster Session: 900V GaN FETs in a 300 kHz 2 kW LLC for High Input Voltage Applications
Authors: Feng Qi, Zhan Wang, Yifeng Wu, Philip Zuk
Time: 5:30 p.m. - 7:30 p.m.
GaN Applications
For additional event information, visit here.
IEEE Energy Conversion Congress & Expo (ECCE) 2019
Baltimore, Maryland, U.S.A. | Sept. 29 to Oct. 3, 2019
Speaking Engagement
Date: Wednesday, Oct. 2
Session SS3: Current Status and Future Prospects of GaN Power HEMTs
Speaker: Philip Zuk, VP of Worldwide Technical Marketing and NA Sales
Time: 4 p.m. to 5:40 p.m.
For additional event information, visit here.
13th Topical Workshop on Heterostructure Microelectronics
Toyama, Japan | August 26 – 29, 2019
Speaking Engagement
Date: TBD
Session: Qualified GaN Transistor Technology for Automotive Applications
Speaker: Dr. Primit Parikh, COO & Co-founder
Time: TBD
For additional event information, visit here.
Shanghai, China | June 26 – 28, 2019
Speaking Engagement
Date: Wednesday, June 26
Session: High Voltage GaN Switch Reliability
Speaker: Likun Shen, Manager of Product Engineering
Time: 2:50 p.m.
For additional event information, visit here.
Taipei, Taiwan | May 23 - 25, 2019
Keynote Presentation
Date: Saturday, May 25
Session: Keynote XII
Speaker: Dr. Yifeng Wu, Senior Vice President of Engineering
Time: 11:20 a.m. - 12:00 p.m.
For additional event information, visit here.
IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 2019)
Shanghai, China | May 19 - 23, 2019
Speaking Engagement
Date: Sunday, May 19
Course: Full Market Validation of 600V+ GaN Power Devices
Speaker: Dr. Yifeng Wu, Senior Vice President of Engineering
Time: 14:30 - 15:30
For additional event information, visit here.
Nuremberg, Germany | May 7-9, 2019
Visit us in Hall 9, Booth 519!
- AEC-Q101 GaN FETs qualified at 175°C
- Customer solutions in production with Transphorm GaN
- Design guidance to kickstart GaN end product development
Presentation
Wednesday, May 8
Session: GaN Devices are Mature
Speaker: Philip Zuk, VP of Technical Marketing Worldwide
Time: 2:30 p.m. to 3:30 p.m.
Location: Hall 7, Booth 543