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International Workshop on Nitride Semiconductors (IWN) 2018
Kanazawa, Japan | November 11-16, 2018
Date: Friday, November 16
Invited Talk: GaN power electronics: progress in performance and reliability
Speaker: Likun Shen, Manager of Product Engineering
Time: 12:20 p.m. - 12:45 p.m.
For additional event information, visit here.
64th IEEE International Electron Devices Meeting (IEDM)
California, U.S.A. | December 1-5, 2018
Date: Tuesday, December 4
Invited Talk: GaN Power Commercialization with Highest Quality, Highest Reliability 650 V HEMTs
Requirements, Successes, and Challenges
Speaker: Primit Parikh, President
Time: 5:15 p.m. - 5:40 p.m.
For additional event information, visit here.
The 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2018)
Georgia, U.S.A. | October 31 - November 2, 2018
Date: Thursday, November 1
Presentation: Reliability & Performance Related to Internal Avalanche of GaN Cascade Devices
Speakers: Yifeng Wu, VP of Product Development, Transphorm & Yan Lai, Platform Development Engineer, Nexperia
Time: 3:15 p.m. - 4:55 p.m.
GaN Reliability & Devices Session
Date: Thursday, November 1
Presentation: High Voltage GaN Power Switch Reliability & Robustness
Speaker: Ron Barr, VP of Quality, Reliability and Analytics
Time: 3:15 p.m. - 4:55 p.m.
GaN Reliability & Devices Session
Date: Friday, November 2
Presentation: Analysis of Calculation Models for Device Resonance in Critical Mode Converters
Speaker: Feng Qi, Sr. Power Electronics Engineer
Time: 1:00 p.m. - 2:40 p.m.
GaN Softswitching and Multilevel Applications Session
For additional event information, visit here.
International Forum on Wide Bandgap Semiconductors (IFWS 2018)
Shenzhen, China | October 23-25, 2018
Wednesday, October 24
Plenary Session: Wide Bandgap Technologies / Gallium Nitride
Speaker: Umesh Mishra, Ph.D., CTO
Time: afternoon session
Thursday, October 25
Tutorial: GaN Power Devices and Applications
Speaker: Yifeng Wu, Vice President, Product Development
Time: morning session
For additional event information, visit here.
2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
California, U.S.A. | October 14-17, 2018
Date: Wednesday, October 17
Invited Talk: 650 Volt GaN—Highest Quality, Highest Performance Drives Market Ramp
Speaker: Primit Parikh, President
Time: 10:40 a.m. - 11:10 a.m.
For additional event information, visit here.
2018 IEEE Energy Conversion Congress & Expo (ECCE)
Oregon, U.S.A. | September 23-27, 2018
Oral Session Participation
Date: Monday, September 24
Session: S29 - GaN Devices & Applications
Chair: Feng Qi, Sr. Power Electronics Engineer
Time: 2:20 p.m. - 4:25 p.m.
For additional event information, visit here.
Power Conversion and Intelligent Motion
Nuremberg, Germany | June 5-7, 2018
Exhibit: Tuesday, June 5 to Thursday, June 7
Transphorm booth # 9-626
Showcase will include:
Speaking Engagement
Wednesday, June 6
"GaN—Devices for the Future Design" Podium Session
Speaker: Philip Zuk, VP of Technical Marketing
Time: 2:30 PM
Location: Hall 6, Booth 143
For general PCIM event information, visit here.
Texas, U.S.A. | May 7-10, 2018
Tuesday, May 8
Looking for Reliability and High Performance in RF and Power Conversion Applications Using GaN
Speaker: Umesh Mishra, Ph.D., CTO
Time: 11:00 a.m.
In addition to his plenary session, Dr. Mishra will participate in the ROCS Workshop scheduled for Monday, May 7.
For additional event information, visit here.
20th Annual Automotive Electronics Reliability Workshop
Michigan, U.S.A. | April 24-26, 2018
Tuesday, April 24
Demonstrating GaN Power Switch Robustness
Speaker: Ron Barr, VP of Quality
Time: 1:30 - 2:00 p.m.
For additional event information, visit here.