TransphormHighest Performance, Highest Reliability GaN

Events

CS MANTECH 2019: ROCS Workshop

Minneapolis, Minnesota, U.S.A. | April 29 – May 2, 2019

Speaking Engagement

Date: Monday, April 29
Session: Reliability of Compound Semiconductor (ROCS) Workshop
Speaker: Ron Barr, VP of Quality + Reliability 
Time: TBD

For additional event information, visit here.

 

2019 AEC Annual Reliability Workshop

Novi, Michigan, U.S.A. | April 30 - May 2, 2019

Speaking Engagement

Date: Tuesday, April 30
Session 2: Discrete & Optoelectronic Technology Improvements
Presentation: Reliability Qualification of a 35 mohm 650V, 175C, GaN FET for Automotive Applications
Speaker: Ron Barr, VP of Quality + Reliability
Time: 1:30 - 2:00 p.m.

For additional event information, visit here.

 

Visit us at PCIM 2019!

Nuremberg, Germany | May 7-9, 2019

Visit us in Hall 9, Booth 519! 

  • AEC-Q101 GaN FETs qualified at 175°C
  • Customer solutions in production with Transphorm GaN
  • Design guidance to kickstart GaN end product development

Presentation

Wednesday, May 8
Session: GaN Devices are Mature

Speaker: Philip Zuk, VP of Technical Marketing Worldwide
Time: 2:30 p.m. to 3:30 p.m.
Location: Hall 7, Booth 543

 


PAST EVENTS


 

Visit us at APEC 2019!

Anaheim, CA | March 17-21, 2019

Monday, March 18 to Wednesday, March 20
Visit us at the Transphorm: Booth 533

  • AEC-Q101 GaN FETs qualified at 175°C
  • Customer solutions in production with Transphorm GaN
  • Design guidance to kickstart GaN end product development

Papers & Presentations

Tuesday, March 19
Paper: 650 V GaN-based 3.3 kW Bi-directional DC-DC Converter for High Efficiency Battery Charger with Wide Battery Voltage Range

Authors: Feng Qi, Zhan Wang, Yifeng Wu
Time: 11:40 a.m.
Room: 303CD

Wednesday, March 20
Presentation: 650 V GaN HEMT Reliability for Automotive Applications

Speaker: Ron Barr
Time: 2:50 p.m.
Room: 210D

Thursday, March 21
Presentation: Real World High Voltage GaN Design Experiences

Speaker: Philip Zuk
Customer Speaker: Jon Gerow, CORSAIR
Time: 9:45 a.m.
Room: 209AB

Thursday, March 21
Paper: High Efficiency Single-phase Transformerless PV Inverter Using GaN HEMTs and Si MOSFETs

Authors: Feng Qi, Zhan Wang, Yifeng Wu
Time: 11:15 a.m.
Room: Poster Area

 

2019 IEEE International Reliability Physics Symposium (IRPS)

California, U.S.A. | March 31 – April 4, 2019

Speaking Engagement

Date: Tuesday, April 2
Session: GaN Reliability Workshop
Speaker: Ron Barr, VP of Quality + Reliability
Time: 7:00 p.m.

For additional event information, visit here.

 

2019 GaN Con

California, U.S.A. | February 21, 2019

Speaking Engagement

Panel: Power GaN—From Promises to Possible Market Explosion
Speaker: Philip Zuk, VP of Worldwide Technical Marketing

For additional event information, visit here.

 

64th IEEE International Electron Devices Meeting (IEDM)

California, U.S.A. | December 1-5, 2018

Speaking Engagement

Date: Tuesday, December 4
Invited Talk: GaN Power Commercialization with Highest Quality, Highest Reliability 650 V HEMTs
Requirements, Successes, and Challenges
Speaker: Primit Parikh, President
Time: 5:15 p.m. - 5:40 p.m.

For additional event information, visit here.

 

International Workshop on Nitride Semiconductors (IWN) 2018

Kanazawa, Japan | November 11-16, 2018

Speaking Engagement

Date: Friday, November 16
Invited Talk: GaN power electronics: progress in performance and reliability
Speaker: Likun Shen, Manager of Product Engineering
Time: 12:20 p.m. - 12:45 p.m.

For additional event information, visit here.

 

The 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2018)

Georgia, U.S.A. | October 31 - November 2, 2018

Speaking Engagements

Date: Thursday, November 1
Presentation: Reliability & Performance Related to Internal Avalanche of GaN Cascade Devices
Speakers: Yifeng Wu, VP of Product Development, Transphorm & Yan Lai, Platform Development Engineer, Nexperia
Time: 3:15 p.m. - 4:55 p.m.
GaN Reliability & Devices Session 

Date: Thursday, November 1
Presentation: High Voltage GaN Power Switch Reliability & Robustness
Speaker: Ron Barr, VP of Quality, Reliability and Analytics
Time: 3:15 p.m. - 4:55 p.m.
GaN Reliability & Devices Session 

Date: Friday, November 2
Presentation: Analysis of Calculation Models for Device Resonance in Critical Mode Converters
Speaker: Feng Qi, Sr. Power Electronics Engineer
Time: 1:00 p.m. - 2:40 p.m.
GaN Softswitching and Multilevel Applications Session

For additional event information, visit here.

 

« Back to News & Events

Back to top