TransphormHighest Performance, Highest Reliability GaN

Events

Wide Bandgap Conference 2020

Virtual Event | December 8 - 9, 2020

Speaking Engagement

Date: December 8 
Presentation:
 Increasing the Practicality of Design Using GaN Semiconductors
Speaker: Philip Zuk, VP of Worldwide Technical Marketing and NA Sales
Time: 9:45 a.m. EST

For additional event information, visit here.

 

Webinar: Where’s the Fit for GaN and SiC?

Virtual Event | December 8, 2020

Webinar

Date: December 8 
Session: 
Where’s the Fit for GaN and SiC?
Speaker: Philip Zuk, VP of Worldwide Technical Marketing and NA Sales
Time: 8:30 a.m. PT

To register, visit here.

Session Description

System Performance Benefits from Using Power Converters Made with Wide Bandgap Semiconductors

You’ve probably read about the wide bandgap semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), that are replacing silicon power devices including MOSFETs and IGBTs in some power converters. You’ve probably also read that the new wide bandgap devices can switch faster and more efficiently in power conversion circuits than their silicon cousins. How does that translate into performance benefits for users of power converters? This webinar will discuss the positioning of silicon and wideband gap power semiconductor devices in various power conversion applications and will take a look at the system-level benefits that you can expect to enjoy by specifying power converters made with wide bandgap semiconductors.

 


PAST EVENTS


 

CS international Conference 2020

Brussels, Belgium | November 17 - 18, 2020

Speaking Engagement

Date: November 18
Presentation: Speeding On-board Charging with Automotive-qualified GaN FETs
Speaker: Philip Zuk, VP of Worldwide Technical Marketing and NA Sales
Time: 17:40

For additional event information, visit here.

 

PCIM Europe

Virtual Conference | July 7 - 8, 2020

Visit us at HY-LINE Power Components' booth 519.

Exhibit Highlights:

    • SuperGaN® Gen IV FETs
    • 4 kW Bridgeless Totem-pole AC-DC Evaluation Board with Microchip's dsPIC Digital Power PIM

Visit us in HY-LINE's virtual Aktive & Passive Bauteile Room here.

Video Presentations: 

    • Advances Through Innovation: Transphorm Changes the Game with SuperGaN® Gen IV 650 GaN Platform
    • 4 kW Bridgeless Totem-Pole PFC Using Microchip dsPIC33CK DSC

Industry Forum: Power GaN - Past, Present, Future

    • Panel Presentation & Live Q&A on Tuesday, July 7 at 12:00 CEST (6:00 a.m. ET)
      Join the special event here.

Bodo's GaN Podium Session

    • Presentation on Wednesday, July 8 at 12:45 CEST (6:45 a.m. ET)
      Join the special event here.

For additional event information, visit here.

 

APEC 2020

Louisiana, U.S.A. | March 15 - 19, 2020

Monday, March 16 to Wednesday, March 18
Visit us at the Transphorm Booth: 1514

Meet with us

Speaking Engagements

March 15

S04 - Full Technology Validation of 600V+ GaN Power Devices—from Device Structure, Performance and Reliability, to Application Economics, User Satisfaction and ppm Field Failure Rate

Speaker: Yifeng Wu, Senior VP, Engineering
Time: 9:30 AM - 1:00 PM
Room: 217-219

March 17

IS04.5 - Advances Through Innovation: Transphorm Changes the Game with Gen-IV SuperGaN® 650V GaN Platform

Speaker: Yifeng Wu, Senior VP, Engineering
Time: 10:40 AM - 11:05 AM
Room: R06

No Digital Control Experience Needed: Bridgeless Totem Pole PFC GaN Designs Made Simple with Transphorm and Microchip

Speaker: Jenny Cortez, NA FAE
Time: 1:45 PM - 2:15 PM
Room: 225-227

March 18

IS08.2 - Portable Power for the People: Inergy Realizes its Vision with Transphorm GaN

Speakers: Philip Zuk, VP, Worldwide Technical Marketing & NA Sales and Sean Luangrath, CEO, Inergy
Time: 8:55 AM - 9:20 AM
Room: R02-R03

T19.2 - GaN FETs Enable High Frequency Dual Active Bridge Converters for Bi-Directional Battery Chargers

Speaker: Feng Qi, Senior Power Electronics Engineer
Time: 2:50 PM - 3:10 PM
Room: 225-227

March 19

IS23.2 - Best Practices Using Voltage Acceleration for Reliability Testing of High Voltage GaN

Speakers: Ron Barr, VP, Quality and Reliability and Yifeng Wu, Senior VP, Engineering
Time: 8:55 AM - 9:20 AM
Room: R07

For additional event information, visit here.

 

Power Electronics Conference 2019

Munich, Germany | December 2 - 3, 2019

Speaking Engagement

Date: Tuesday, December 3
Presentation: Higher Voltage, Higher Power, Market Expansion: The Evolution of GaN
Speaker: Philip Zuk, VP of Worldwide Technical Marketing and NA Sales
Time: 4:00 p.m.

For additional event information, visit here.

 

Center for High Performance Power Electronics

Ohio, U.S.A. | November 17, 2019

Speaking Engagement

Date: Sunday, November 17
Tutorial: GaN Reliability
Speaker: Ron Barr, VP of Quality, Reliability and Analytics
Time: 4:00 p.m. - 5:30 p.m.

thumbnail of CHPPE Tutorials Sunday Nov 17

 

WiPDA 2019

North Carolina, U.S.A. | October 29 - October 31, 2019

Speaking Engagements/Presentations

Date: Tuesday, October 29
Tutorial: Best Practices Using Voltage Acceleration to Determine Device Reliability in High Voltage GaN
Speaker: Ron Barr, VP of Quality, Reliability and Analytics
Time: 2:20 p.m. - 3:40 p.m.

Date: Wednesday, October 30
Poster Session: High Voltage GaN Power Switch Reliability & Robustness
Authors: Feng Qi, Zhan Wang, Yifeng Wu
Time: 5:30 p.m. - 7:30 p.m.
GaN Applications
Poster Session: 900V GaN FETs in a 300 kHz 2 kW LLC for High Input Voltage Applications
Authors: Feng Qi, Zhan Wang, Yifeng Wu, Philip Zuk
Time: 5:30 p.m. - 7:30 p.m.
GaN Applications

For additional event information, visit here.

 

IEEE Energy Conversion Congress & Expo (ECCE) 2019

Baltimore, Maryland, U.S.A. | Sept. 29 to Oct. 3, 2019

Speaking Engagement

Date: Wednesday, Oct. 2
Session SS3: Current Status and Future Prospects of GaN Power HEMTs
Speaker: Philip Zuk, VP of Worldwide Technical Marketing and NA Sales 
Time: 4 p.m. to 5:40 p.m.

For additional event information, visit here.

 

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