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Events
2021 Dianyuan Wide Bandgap Festival
Virtual Event | May 27, 2021
Speaking Engagement
Date: May 27
Presentation: Current GaN Power FET Innovations and Development Guidance
Speakers: Likun Shen, Senior Director of Product Engineering & Zhan Wang, Senior Manager of Applications Engineering
Time: 2:00 p.m. CST
For additional event information, visit here.
Virtual Conference + Exposition | June 14 - 17, 2021
Details coming soon!
Visit us at the Transphorm Booth: TBD
Speaking Engagements
Monday, June 14
T07 - GaN, Silicon, and Passive Devices (Devices & Components)
Presentation: Short-Circuit Capability Demonstrated for GaN Power Switches
Speaker: Davide Bisi, Member of Technical Staff, Office of the CTO
Live Q&A: 8:00 PM ET (5:00 PM PT)
IS08 - WBG and Si High Performance Switches – Innovations, Advancements and Challenges
Presentation: Designing GaN Switches to High Power Application Demands: Impactful Results from Switch Design, Packaging and Cost-effective Device Assembly
Speaker: Philip Zuk, SVP Technical Marketing and Business Development
Live Q&A: 8:00 PM ET (5:00 PM PT)
Thursday, June 17
IS20 - Wide Bandgap Semiconductors in Production: How Advanced Power Converters Influence End Product Innovation
Presentation: Marotta Controls Solves Complex Defense PSU Challenges with Transphorm’s GaN
Speakers: Philip Zuk, SVP Technical Marketing and Business Development
Michael Germinario, Senior Technical Director, Business Development, Marotta Controls
Michael Scruggs, Principal Engineer, Marotta Controls
Live Q&A: 5:00 PM ET (2:00 PM PT)
IS16 - Are SiC and GaN Power Transistors Reliable Enough for Your Application? Current Status of Reliability and Product Qualification Topics
Presentation: Methods and Reasons for Advanced Failure Testing of High Voltage GaN
Speaker: Ron Barr, VP of Quality and Reliability
Live Q&A: 10:30 PM ET (7:30 PM PT)
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For additional event information, visit here.
21Dianyuan Live Broadcast: GaN Webinar
Virtual Event | July 29, 2021
Speaking Engagement
Date: July 29
Presentation: Current GaN Power FET Innovations and Development Guidance
Speakers: Likun Shen, Senior Director of Product Engineering & Zhan Wang, Senior Manager of Applications Engineering
Time: TBD
For additional event information, visit TBD.
Virtual Conference | May 3 - 7, 2021
Bodo's GaN Podium Session
- Presentation on Wednesday, May 5 at 3:25 PM CET
"WBG GaN: Serving Low to Line Voltage"
Philip Zuk, SVP Technical Marketing and Business Development, Transphorm
For additional event information, visit here.
Virtual Event | December 8 - 9, 2020
Speaking Engagement
Date: December 8
Presentation: Increasing the Practicality of Design Using GaN Semiconductors
Speaker: Philip Zuk, VP of Worldwide Technical Marketing and NA Sales
Time: 9:45 a.m. EST
For additional event information, visit here.
Webinar: Where’s the Fit for GaN and SiC?
Virtual Event | December 8, 2020
Webinar
Date: December 8
Session: Where’s the Fit for GaN and SiC?
Speaker: Philip Zuk, VP of Worldwide Technical Marketing and NA Sales
Time: 8:30 a.m. PT
To register, visit here.
Session Description
System Performance Benefits from Using Power Converters Made with Wide Bandgap Semiconductors
You’ve probably read about the wide bandgap semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), that are replacing silicon power devices including MOSFETs and IGBTs in some power converters. You’ve probably also read that the new wide bandgap devices can switch faster and more efficiently in power conversion circuits than their silicon cousins. How does that translate into performance benefits for users of power converters? This webinar will discuss the positioning of silicon and wideband gap power semiconductor devices in various power conversion applications and will take a look at the system-level benefits that you can expect to enjoy by specifying power converters made with wide bandgap semiconductors.
CS international Conference 2020
Brussels, Belgium | November 17 - 18, 2020
Speaking Engagement
Date: November 18
Presentation: Speeding On-board Charging with Automotive-qualified GaN FETs
Speaker: Philip Zuk, VP of Worldwide Technical Marketing and NA Sales
Time: 17:40
For additional event information, visit here.
Virtual Conference | July 7 - 8, 2020
Visit us at HY-LINE Power Components' booth 519.
Exhibit Highlights:
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- SuperGaN® Gen IV FETs
- 4 kW Bridgeless Totem-pole AC-DC Evaluation Board with Microchip's dsPIC Digital Power PIM
Visit us in HY-LINE's virtual Aktive & Passive Bauteile Room here.
Video Presentations:
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- Advances Through Innovation: Transphorm Changes the Game with SuperGaN® Gen IV 650 GaN Platform
- 4 kW Bridgeless Totem-Pole PFC Using Microchip dsPIC33CK DSC
Industry Forum: Power GaN - Past, Present, Future
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- Panel Presentation & Live Q&A on Tuesday, July 7 at 12:00 CEST (6:00 a.m. ET)
Join the special event here.
- Panel Presentation & Live Q&A on Tuesday, July 7 at 12:00 CEST (6:00 a.m. ET)
Bodo's GaN Podium Session
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- Presentation on Wednesday, July 8 at 12:45 CEST (6:45 a.m. ET)
Join the special event here.
- Presentation on Wednesday, July 8 at 12:45 CEST (6:45 a.m. ET)
For additional event information, visit here.
Louisiana, U.S.A. | March 15 - 19, 2020
Monday, March 16 to Wednesday, March 18
Visit us at the Transphorm Booth: 1514
Speaking Engagements
March 15
S04 - Full Technology Validation of 600V+ GaN Power Devices—from Device Structure, Performance and Reliability, to Application Economics, User Satisfaction and ppm Field Failure Rate
Speaker: Yifeng Wu, Senior VP, Engineering
Time: 9:30 AM - 1:00 PM
Room: 217-219
March 17
IS04.5 - Advances Through Innovation: Transphorm Changes the Game with Gen-IV SuperGaN® 650V GaN Platform
Speaker: Yifeng Wu, Senior VP, Engineering
Time: 10:40 AM - 11:05 AM
Room: R06
No Digital Control Experience Needed: Bridgeless Totem Pole PFC GaN Designs Made Simple with Transphorm and Microchip
Speaker: Jenny Cortez, NA FAE
Time: 1:45 PM - 2:15 PM
Room: 225-227
March 18
IS08.2 - Portable Power for the People: Inergy Realizes its Vision with Transphorm GaN
Speakers: Philip Zuk, VP, Worldwide Technical Marketing & NA Sales and Sean Luangrath, CEO, Inergy
Time: 8:55 AM - 9:20 AM
Room: R02-R03
T19.2 - GaN FETs Enable High Frequency Dual Active Bridge Converters for Bi-Directional Battery Chargers
Speaker: Feng Qi, Senior Power Electronics Engineer
Time: 2:50 PM - 3:10 PM
Room: 225-227
March 19
IS23.2 - Best Practices Using Voltage Acceleration for Reliability Testing of High Voltage GaN
Speakers: Ron Barr, VP, Quality and Reliability and Yifeng Wu, Senior VP, Engineering
Time: 8:55 AM - 9:20 AM
Room: R07
For additional event information, visit here.