TransphormHighest Performance, Highest Reliability GaN

Events

2019 AEC Annual Reliability Workshop

Novi, Michigan, U.S.A. | April 30 - May 2, 2019

Speaking Engagement

Date: Tuesday, April 30
Session 2: Discrete & Optoelectronic Technology Improvements
Presentation: Reliability Qualification of a 35 mohm 650V, 175C, GaN FET for Automotive Applications
Speaker: Ron Barr, VP of Quality + Reliability
Time: 1:30 - 2:00 p.m.

For additional event information, visit here.

 

CS MANTECH 2019: ROCS Workshop

Minneapolis, Minnesota, U.S.A. | April 29 – May 2, 2019

Speaking Engagement

Date: Monday, April 29
Session: Reliability of Compound Semiconductor (ROCS) Workshop
Speaker: Ron Barr, VP of Quality + Reliability 
Time: TBD

For additional event information, visit here.

 

Visit us at APEC 2019!

Anaheim, CA | March 17-21, 2019

Monday, March 18 to Wednesday, March 20
Visit us at the Transphorm: Booth 533

  • AEC-Q101 GaN FETs qualified at 175°C
  • Customer solutions in production with Transphorm GaN
  • Design guidance to kickstart GaN end product development

Papers & Presentations

Tuesday, March 19
Paper: 650 V GaN-based 3.3 kW Bi-directional DC-DC Converter for High Efficiency Battery Charger with Wide Battery Voltage Range

Authors: Feng Qi, Zhan Wang, Yifeng Wu
Time: 11:40 a.m.
Room: 303CD

Wednesday, March 20
Presentation: 650 V GaN HEMT Reliability for Automotive Applications

Speaker: Ron Barr
Time: 2:50 p.m.
Room: 210D

Thursday, March 21
Presentation: Real World High Voltage GaN Design Experiences

Speaker: Philip Zuk
Customer Speaker: Jon Gerow, CORSAIR
Time: 9:45 a.m.
Room: 209AB

Thursday, March 21
Paper: High Efficiency Single-phase Transformerless PV Inverter Using GaN HEMTs and Si MOSFETs

Authors: Feng Qi, Zhan Wang, Yifeng Wu
Time: 11:15 a.m.
Room: Poster Area

 

2019 IEEE International Reliability Physics Symposium (IRPS)

California, U.S.A. | March 31 – April 4, 2019

Speaking Engagement

Date: Tuesday, April 2
Session: GaN Reliability Workshop
Speaker: Ron Barr, VP of Quality + Reliability
Time: 7:00 p.m.

For additional event information, visit here.

 

2019 GaN Con

California, U.S.A. | February 21, 2019

Speaking Engagement

Panel: Power GaN—From Promises to Possible Market Explosion
Speaker: Philip Zuk, VP of Worldwide Technical Marketing

For additional event information, visit here.

 

PowerAmerica Annual Meeting

North Carolina, U.S.A. | February 12 - 14, 2019

Panel Discussion

Date: Wednesday, February 13
Session: Power GaN Applications and Reliability
Speaker: Dr. Primit Parikh, COO & Co-founder
Time: 11:00 a.m. - Noon

For additional event information, visit here.

 

64th IEEE International Electron Devices Meeting (IEDM)

California, U.S.A. | December 1-5, 2018

Speaking Engagement

Date: Tuesday, December 4
Invited Talk: GaN Power Commercialization with Highest Quality, Highest Reliability 650 V HEMTs
Requirements, Successes, and Challenges
Speaker: Primit Parikh, President
Time: 5:15 p.m. - 5:40 p.m.

For additional event information, visit here.

 

International Workshop on Nitride Semiconductors (IWN) 2018

Kanazawa, Japan | November 11-16, 2018

Speaking Engagement

Date: Friday, November 16
Invited Talk: GaN power electronics: progress in performance and reliability
Speaker: Likun Shen, Manager of Product Engineering
Time: 12:20 p.m. - 12:45 p.m.

For additional event information, visit here.

 

The 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2018)

Georgia, U.S.A. | October 31 - November 2, 2018

Speaking Engagements

Date: Thursday, November 1
Presentation: Reliability & Performance Related to Internal Avalanche of GaN Cascade Devices
Speakers: Yifeng Wu, VP of Product Development, Transphorm & Yan Lai, Platform Development Engineer, Nexperia
Time: 3:15 p.m. - 4:55 p.m.
GaN Reliability & Devices Session 

Date: Thursday, November 1
Presentation: High Voltage GaN Power Switch Reliability & Robustness
Speaker: Ron Barr, VP of Quality, Reliability and Analytics
Time: 3:15 p.m. - 4:55 p.m.
GaN Reliability & Devices Session 

Date: Friday, November 2
Presentation: Analysis of Calculation Models for Device Resonance in Critical Mode Converters
Speaker: Feng Qi, Sr. Power Electronics Engineer
Time: 1:00 p.m. - 2:40 p.m.
GaN Softswitching and Multilevel Applications Session

For additional event information, visit here.

 

International Forum on Wide Bandgap Semiconductors (IFWS 2018)

Shenzhen, China | October 23-25, 2018

Speaking Engagements

Wednesday, October 24
Plenary Session: Wide Bandgap Technologies / Gallium Nitride
Speaker: Umesh Mishra, Ph.D., CTO
Time: afternoon session

Thursday, October 25
Tutorial: GaN Power Devices and Applications
Speaker: Yifeng Wu, Vice President, Product Development
Time: morning session

For additional event information, visit here.

 

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