News

(日本語) Transphorm赢得DARPA 140万美元合同–企业新闻频道-《化合物半导体》
(日本語) Compound Semiconductor China Online, 10.29.21

(日本語) DARPA推动在蓝宝石衬底上开发N极性GaN
(日本語) Application of Electronic Technique Online, 10.27.21

New Book on “GaN Power Devices and Applications”
Power Electronics Europe, 10.25.21

Transphorm appoints experienced general counsel to board
Semiconductor Today, 10.21.21

SiC and GaN: A Tale of Two Semiconductors
EE Times, 10.20.21

DARPA Commissions Transphorm to Develop N-polar GaN on Sapphire Substrates
All About Circuits, 10.16.21

Transphorm Awarded DARPA Contract
Semiconductor Engineering, 10.15.21

Transphorm wins $1.4 million contract from Defense Advanced Research Projects Agency
Powerelectronics.co, 10.14.21

(日本語) Transphorm策略合作夥伴安川電機以每股5.00美元的價格將1560萬美元債券轉換為Transphorm普通股│科技生活
(日本語) Techlife, 10.13.21

Transphorm wins $1.4m DARPA contract to build on work with ONR
Semiconductor Today, 10.13.21