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Transphorm Expands Second Generation Portfolio with Lower On-Resistance TO-220 650V GaN FET

New Device Brings Greater Design Flexibility While Enabling Bridgeless Totem-Pole PFC Designs

Transphorm expands 650V GaN FET portfolio with lower on-resistance TPH3212PSELECTRONICA 2016 [Hall B1, Booth #425]—MUNICH, GERMANY—November 9, 2016—Transphorm Inc., a leader in the design and manufacturing of JEDEC-qualified 650V GaN (gallium nitride) semiconductors, today announced its latest portfolio addition: the TPH3212PS. Available in a TO-220 package, the device has an on-resistance of 72 mOhms (mΩ) and targets AC to DC and DC to AC power supplies. When used inside the former, the TPH3212PS—along with its family members—makes implementing bridgeless totem-pole power factor correction (PFC) designs possible.

To date, Transphorm’s product portfolio consists of 600V and 650V discrete FETs spanning TO-220, TO-247, and PQFN88 packages for power levels up to 4.5 kilowatts. The TPH3212PS fills a power level gap in the company’s second generation product line, specifically between the 52mΩ and 110mΩ FETs. As a result, battery charger, PV inverter, server and servo motor manufacturers gain more design flexibility with Transphorm’s newest high-quality, high-reliability discrete device.

Release of the TPH3212PS remains in step with Transphorm’s mission to enable design engineers to effectively implement GaN technology into designs. The company develops its GaN in well-understood TO-XXX and PQFN88 packages. Further, Transphorm uses the high-reliability cascode configuration, which eliminates the need for custom drivers and—most importantly—considerably increases the GaN FET’s gate safety margin.

“Transphorm aims to enable the market by delivering GaN in the highest quality, highest reliability format as possible,” said Umesh Mishra, CTO, Transphorm. “We recognize GaN is not just a drop-in replacement for silicon MOSFETs used today. Board redesign and system modifications are required to capitalize on GaN’s complete set of benefits from performance through to system cost. If we can minimize that learning curve by working with well-known packages and a configuration that behaves similarly to a MOSFET—we believe the industry will move further faster.”

TPH3212PS Highlights
Notable TPH3212PS benefits include:

  • 30 to 40 percent increase in system level power density
  • 2x to 4x faster switching compared to silicon; lowering crossover losses to increase system efficiency
  • Compatible with off-the-shelf gate drivers; increasing gate safety margin to an industry-leading, unmatched ± maximum 18V gate drive
  • For designs moving from standard PFC to bridgeless totem-pole: eliminates use of a bridge rectifier, parallel FETs, and additional passives as the power level increases; reducing overall system cost

Download a detailed TPH3212PS data sheet here.

Availability, Pricing and Support
Fully-qualified and in production, the TPH3212PS is priced at US$8.94 in 1000-unit quantities. The product is currently supported by a SPICE program and application notes. A full evaluation kit for 2.5 kilowatt hard-switched half-bridge, buck or boost designs is available for pre-order and priced at US$250. Visit here for details.

About Transphorm
Transphorm is a global semiconductor company wholly-focused on delivering the highest quality, highest reliability gallium nitride (GaN) devices for high voltage power conversion applications. To ensure this, Transphorm deploys its unique vertically-integrated approach that leverages 300+ years of combined GaN engineering expertise at every development stage: design, fabrication, device, and application integration. This approach, backed by the industry’s largest IP portfolio of over 600 unique patents to date, has yielded the industry’s only JEDEC-qualified GaN FETs. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99 percent efficiency and reduce energy loss by more than 40 percent. Learn more at

Press Contact:
Heather Ailara
Crimson Communicates


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