650V GaN FET Portfolio Expansion Sets Another Industry Milestone
In-Booth Showcase Demonstrates GaN Innovations
APEC Sessions Educate Engineers on GaN System Design Methods and Resources
GOLETA, Calif.—February 28, 2017—Transphorm Inc., the leader in the design and manufacturing of JEDEC-qualified 650V GaN (gallium nitride) semiconductors, highlights its comprehensive presence at the 2017 Applied Power Electronics Conference (APEC). Transphorm’s core commitment to quality and reliability will be demonstrated in all event activities, from company and customer product showcases to educational presentations. [Booth #824]
APEC attendees will learn how the company’s GaN material and device configuration lead to high voltage power system innovations and benchmark-setting efficiencies. Further, spokespeople will be available to explain the rigorous, extensive testing Transphorm conducts to ensure its FETs deliver the highest quality, reliability and lifetime performance possible today.
Breaking News: An APEC-timed portfolio expansion announcement will mark yet another GaN industry milestone driven by Transphorm.
Customer Product Launch: Transphorm is honored to host a customer’s first public look at an innovative switch-mode power supply design solution. This solution will enable engineers to integrate a GaN-powered solution into their applications in an unprecedented manner, helping to bridge knowledge gaps as well as reduce design time.
Transphorm will present two sessions during APEC:
Presentation: How to Design with GaN in Under an Hour
Speaker: Philip Zuk, Sr. Director, Technical Marketing
Date/Time: Wednesday, March 29 @ 10:30 a.m. – 11:00 a.m.
Location: Room 21
Presentation: Preventing GaN Device VHF Oscillation Using a Drain Ferrite Bead
Speaker: Zan Huang, Director, Field Applications, U.S. and Asia
Date/Time: Thursday, March 30 @ 10:30 a.m. – 11:00 a.m.
Time subject to change
Location: Room 15/16
Customer Displays: Transphorm customer solutions currently in production will be displayed, such as:
The first AC-DC front-end switch-mode power supply implementing bridgeless totem-pole PFC topology
The first GaN-based redundant power supply demonstrating performance and size efficiencies outpacing those of incumbent tech
Showcase: In addition to GaN modules and discretes in various packages, Transphorm will host static and live demonstrations of high voltage GaN system development and device innovations.
Additional Booth Presence: Digi-Key Electronics [Booth #537] will showcase Transphorm’s new 2.5kW Half-Bridge Evaluation Board.
Transphorm is a global semiconductor company wholly-focused on delivering the highest quality, highest reliability gallium nitride (GaN) devices for high voltage power conversion applications. To ensure this, Transphorm deploys its unique vertically-integrated business approach that leverages the industry’s most experienced GaN engineering team at every development stage: design, fabrication, device, and application support. This approach, backed by one of the industry’s largest IP portfolios with over 600 patents, has yielded the industry’s only JEDEC-qualified GaN FETs. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99 percent efficiency and reduce energy loss by more than 40 percent. Learn more at transphormusa.com and follow us @transphormusa.