Transphorm Previews New GaN 3.3kW Totem-Pole PFC Reference Design During EPE 2017 ECCE Europe

First look at next generation development tool kicks off four days of education regarding high-voltage GaN design techniques, resources and reliability testing methods

GOLETA, Calif.—September 10, 2017—Transphorm Inc., the leader in the design and manufacturing of JEDEC and AEC-Q101 qualified 650V gallium nitride (GaN) semiconductors, will be on site next week at the EPE’17 ECCE Europe show in Warsaw, Poland, September 11 to 14. This event is the latest initiative in the company’s mission to educate application design engineers on high-voltage (HV) GaN use as well as to introduce Transphorm’s new reference design and latest development tools. Transphorm’s GaN FETs are used in power electronics systems including data center and industrial power supplies, servo motors, photovoltaic inverters and automotive applications, such as on-board chargers. Show attendees can visit Transphorm experts at Booth 23, Room 2H.

Preview: 3.3kW Bridgeless Totem-Pole Power Factor Correction Reference Design
Transphorm Silicon Valley Center of Excellence’s soon-to-be-released totem-pole PFC reference design is built on the company’s next generation (Gen-III) 650V 35mΩ GaN FET and will be displayed for the first time. The board leverages DSP firmware to deliver a turnkey design solution with no code expertise required. The reference design targets engineers building high-efficiency applications for automotive on-board chargers and industrial power supplies.

Education Session: “Reliability Testing of High-voltage GaN FETs”
Transphorm’s commitment to high Quality and Reliability has established the company as a leader in defining high-voltage GaN testing methods. In addition to applying industry standard qualification tests (i.e., JEDEC and AEC-Q101) to GaN devices, aggressive lifetime testing is required to establish operating life expectancy. Accelerated stress tests, such as high voltage off state and high temperature DC current tests, are used to determine activation energies and acceleration factors which can be used to estimate operating life for any given mission profile. Jim Honea, Senior Manager of Applications Engineering, will provide an overview of test results and typical application of them during Transphorm’s EPE vendor session.

Session Date: Wednesday, September 13
Time: 16:15
Location: Room 2H, Vendor Session Stage

Welcome to the GaN Revolution!
Transphorm is a global semiconductor company, leading the GaN Revolution with the highest performance, highest reliability GaN devices for high voltage power conversion applications. To ensure this, Transphorm deploys its unique vertically-integrated business approach that leverages the industry’s most experienced GaN engineering team at every development stage: design, fabrication, device and application support. This approach, backed by one of the industry’s largest IP portfolios with over 600 patents, has yielded the industry’s only JEDEC- and AEC-Q101-qualified GaN FETs. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99 percent efficiency, 40 percent more power density and 20 percent lower system cost. Join the revolution at transphormusa.com and follow us @transphormusa.

Press Contact:
Heather Ailara
Crimson Communicates

+1.917.715.3273