GOLETA, Calif.—May 23, 2023—Transphorm, Inc. (Nasdaq: TGAN)—global leader in fundamentally superior, quantitatively outperforming GaN power semiconductors—today announced it has been awarded a contract for up to $15 million from the National Security Technology Accelerator (NSTXL). The contract is for the ECLIPSE Project, under which Transphorm is commissioned to manufacture advanced GaN epiwafers. The company’s opportunity to contribute to this Project underscores Transphorm’s IP, knowledge, and expertise in the advanced GaN materials sector as well as its MOCVD manufacturing infrastructure.
Transphorm’s experience in GaN epiwafer design, development, and production of various breakthrough high voltage GaN platforms spans more than ten years. These initiatives constitute multiple verticals for the semiconductor pioneer’s Power and RF GaN businesses.
“Inarguably, the value of and potential for advanced GaN materials is clear in a wide range of applications. We’ve developed multiple high power density platforms that generate record performance and efficiency advantages suited for power conversion and RF applications,” said Umesh Mishra, CTO and Co-founder, Transphorm. “This type of innovation is where Transphorm excels because of its strong core epi materials versatility coupled with its device and manufacturing capabilities. We’ve worked to evolve and better all GaN technology aspects —materials, design, and process. We now look forward to strong execution on the ECLIPSE program, enhancing our capability to supply advanced GaN epiwafers.”
The contract proposal process was administered by the National Security Technology Accelerator (NSTXL) as an OTA (Other Transaction Agreement).
Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications. Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry’s first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices. The Company’s vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support. Transphorm’s innovations move power electronics beyond the limitations of silicon to achieve over 99% efficiency, 50% more power density and 20% lower system cost. Transphorm is headquartered in Goleta, California and has manufacturing operations in Goleta and Aizu, Japan. For more information, please visit www.transphormusa.com. Follow us on Twitter @transphormusa and WeChat @ Transphorm_GaN.
David Hanover or Jack Perkins
KCSA Strategic Communications