TransphormHighest Performance, Highest Reliability GaN

Webinar: Where’s the Fit for GaN and SiC?

Virtual Event | December 8, 2020


Date: December 8 
Where’s the Fit for GaN and SiC?
Speaker: Philip Zuk, VP of Worldwide Technical Marketing and NA Sales
Time: 8:30 a.m. PT

To register, visit here.

Session Description

System Performance Benefits from Using Power Converters Made with Wide Bandgap Semiconductors

You’ve probably read about the wide bandgap semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), that are replacing silicon power devices including MOSFETs and IGBTs in some power converters. You’ve probably also read that the new wide bandgap devices can switch faster and more efficiently in power conversion circuits than their silicon cousins. How does that translate into performance benefits for users of power converters? This webinar will discuss the positioning of silicon and wideband gap power semiconductor devices in various power conversion applications and will take a look at the system-level benefits that you can expect to enjoy by specifying power converters made with wide bandgap semiconductors.


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