GOLETA, Calif.— September 20, 2017—Transphorm Inc., the leader in the design and manufacturing of highest reliability (JEDEC and AEC-Q101 qualified) 650V gallium nitride (GaN) semiconductors, along with Yaskawa Electric Corporation announced that Yaskawa’s Σ-7 F is the first servo motor to use high-voltage (HV) GaN. Transphorm’s technology enables Yaskawa to deliver better performance in a smaller form factor versus what is possible with incumbent silicon semiconductors. The groundbreaking achievement of this co-developed device is that the Σ-7 F integrates the servo amplifier with the servo motor itself. Further, Yaskawa’s use of Transphorm’s GaN FETs produces an integrated servo motor half the size of a similar design using Silicon (Si) technology.
The Σ-7 F: Revolutionized by GaN
The Σ-7 F series—AC servo motors in a three-phase bridge configuration—uses Transphorm’s HV GaN FETs in a standard three lead TO-220 package. The topology will be deployed across Yaskawa’s full Σ-7 F product line, which currently includes three servo motors ranging from 100W to 400W. The integrated motor allows the industrial manufacturing system to simplify cabling in a daisy chain configuration.
Further, it reduces the system’s control panel cabinet size by as much as 30 percent, given:
Transphorm’s HV GaN technology inherently delivers better efficiency via lower gate charge, faster switching speeds and smaller reverse recovery charge when compared to incumbent technologies, while offering high reliability. Additionally, applications designed on Transphorm GaN achieve smaller device size, higher power density and lower overall system costs. Yaskawa’s Σ-7 F motor demonstrates these benefits as well as:
|Increased switching frequency
reduces smoothing capacitor
by up to 75 percent
|Smaller PCB size|
|Inverter circuit losses decrease
by as much as 66 percent when
compared to Si/IGBTs
|Smaller heat sink|
|Inaudible carrier frequencies reduce
noise by as much as 6-8 dB at 6K RPMs
when compared to Si/IGBTs
The Σ-7 F targets industrial multi-axis automation systems commonly used in conveyance equipment as well as food product and packaging manufacturing. Such automation systems must provide high precision, high throughput, repeatability and design flexibility.
Working with Transphorm
“The Σ-7 F servo motor is our second Transphorm GaN product and our second time leading an industry into the future with revolutionary power solutions,” said Kazuhiro Imanaga, General Manager, Servo Drives Technology Department, Motion Control Division, Yaskawa Electric. “When delivered by trusted suppliers, GaN has the potential to radically change what’s possible in industrial automation systems. Yaskawa has the vision capable of driving that change. Our belief in the Q+R of Transphorm’s GaN along with our positive partnership experience with the company’s engineers enables us to fulfill that vision.”
The Σ-7 F resulted from a strong multi-year partnership between Yaskawa and Transphorm. Yaskawa’s Research and Development team as well as its Quality and Production team worked closely with members of Transphorm’s GaN Development, Applications, Quality and Manufacturing teams. Additionally, Yaskawa tapped into Transphorm’s design resources and tools throughout the development process, which are available to customers through Transphorm’s Silicon Valley Center of Excellence.
To learn more about how Transphorm GaN can benefit industrial systems or for help modifying current system designs, contact us at transphormusa.com/support.
About Yaskawa Electric Corporation
Yaskawa Electric located in Kitakyushu, Japan, is a world-leading provider of core technologies focused on motion control, robotics, and system engineering. Founded in 1915, Yaskawa Electric has provided exceptional customer experiences for 100 years. Focusing on mechatronic solutions, it has shipped over 20 million AC drives, 15 million servo motors and 300,000 robots worldwide. For more information, visit www.yaskawa.co.jp.
Welcome to the GaN Revolution!
Transphorm is a global semiconductor company, leading the GaN Revolution with the highest performance, highest reliability GaN devices for high voltage power conversion applications. To ensure this, Transphorm deploys its unique vertically-integrated business approach that leverages the industry’s most experienced GaN engineering team at every development stage: design, fabrication, device and application support. This approach, backed by one of the industry’s largest IP portfolios with over 600 patents, has yielded the industry’s only JEDEC- and AEC-Q101-qualified GaN FETs. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99 percent efficiency, 40 percent more power density and 20 percent lower system cost. Join the revolution at transphormusa.com and follow us @transphormusa.