The TP65H015G5WS 650V 15mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s GenV platform. It icombines a state-of-the-art high voltage GaN HEMT with a low voltage Silicon MOSFET to offer superior reliability and performance.
Transphorm GaN offers improved efficiency over Silicon through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H015G5WS is offered in an industry-standard 3-lead TO-247 with a common source package configuration.
|VDS (V) min||650|
|V(TR)DSS (V) max||725|
|RDS(on)eff (mΩ) max*||18|
|QRR (nC) typ||430|
|QG (nC) typ||68|
|*Reflects both static and dynamic on-resistance|
Output Power (W)
Output Power (W)
AN0002: Characteristics of Transphorm GaN Power FETs
AN0003: Printed Circuit Board Layout and Probing for GaN FETs
AN0004: Designing Hard-switched Bridges with GaN
AN0006: VGS Transient Tolerance of Transphorm GaN FETs
AN0008: Drain Voltage and Avalanche Ratings for GaN FETs
AN0009: Recommended External Circuitry for Transphorm GaN FETs
AN0010: GaN FETs in Parallel Using Drain Ferrite Beads and RC Snubbers for High-power Applications
DG001: LLC Resonant Tank Design for 3.3kW Electric Vehicle On-board Charger with Wide-range Output Voltage
DG004: Multi-pulse Testing for GaN Layout Verification | DG004 DSP Code
DG005: Ultrafast Overcurrent Breaker Circuit for Prototyping | DG005 Design Files
DG007: 200 kHz Phase Shift Full Bridge for 3.3kW Electric Vehicle On-board Charger | DG007 Design Files
DG008: 100 kHz Dual Active Bridge for 3.3kW Bi-directional Battery Charger | DG008 Design Files
Transphorm offers a number of GaN evaluation kits in various topologies, providing an easy-to-use platform to investigate the benefits of GaN.