The TP65H035WSQA 650V 35mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s Gen III platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
The device is also automotive qualified to 175°C, having passed the Automotive Electronics Council’s AEC-Q101 stress tests for automotive-grade discrete semiconductors.
Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H035WSQA is offered in an industry-standard 3 lead TO-247 with a common source package configuration.
|VDS (V) min||650|
|V(TR)DSS (V) max||800|
|RDS(on)eff (mΩ) max*||41|
|QRR (nC) typ||178|
|QG (nC) typ||24|
|*Reflects both static and dynamic on-resistance|
Output Power (W)
Output Power (W)
AN0002: Characteristics of Transphorm GaN Power FETs
AN0003: Printed Circuit Board Layout and Probing for GaN FETs
AN0004: Designing Hard-switched Bridges with GaN
AN0006: VGS Transient Tolerance of Transphorm GaN FETs
AN0007: PQFN88 Lead-free 2nd Level Soldering Recommendations for Vapor Phase Reflow
AN0008: Drain Voltage and Avalanche Ratings for GaN FETs
AN0009: Recommended External Circuitry for Transphorm GaN FETs
AN0010: GaN FETs in Parallel Using Drain Ferrite Beads and RC Snubbers for High-power Applications
DG004: Multi-pulse Testing for GaN Layout Verification | DG004 DSP Code
DG005: Ultrafast Overcurrent Breaker Circuit for Prototyping | DG005 Design Files
DG006: 600W DC to DC LLC Design Using GaN FETs | DG006
Transphorm offers a number of GaN evaluation kits in various topologies, providing an easy-to-use platform to investigate the benefits of GaN.