The TP65H050BS 650V 50mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s Gen III platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H050BS is offered in an industry-standard 3 lead TO-263 with a common source package configuration.
|VDS (V) min||650|
|V(TR)DSS (V) max||800|
|RDS(on)eff (mΩ) max*||60|
|QRR (nC) typ||125|
|QG (nC) typ||16|
|*Reflects both static and dynamic on-resistance|
AN0002: Characteristics of Transphorm GaN Power FETs
AN0003: Printed Circuit Board Layout and Probing for GaN FETs
AN0004: Designing Hard-switched Bridges with GaN
AN0006: VGS Transient Tolerance of Transphorm GaN FETs
AN0008: Drain Voltage and Avalanche Ratings for GaN FETs
AN0009: Recommended External Circuitry for Transphorm GaN FETs
AN0010: GaN FETs in Parallel Using Drain Ferrite Beads and RC Snubbers for High-power Applications
DG002: 2.3kW High-efficiency 2-phase CRM Boost Converter for Solar Inverters
DG004: Multi-pulse Testing for GaN Layout Verification | DG004 DSP Code
DG005: Ultrafast Overcurrent Breaker Circuit for Prototyping | DG005 Design Files
Transphorm offers a number of GaN evaluation kits in various topologies, providing an easy-to-use platform to investigate the benefits of GaN.