TransphormHighest Performance, Highest Reliability GaN

TP65H050G4WS  SuperGaN

650V 50mΩ SuperGaN® FET in TO-247

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The TP65H050G4WS 650V 50mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s GenIV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage Silicon MOSFET to offer superior reliability and performance.

Transphorm GaN offers improved efficiency over Silicon through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

The TP65H050G4WS is offered in an industry-standard 3-lead TO-247 with a common source package configuration.

Key Specifications
VDSS (V) 650
VDSS(TR) (V) 800
RDS(on)eff (mΩ) max* 60
QRR (nC) typ 112
QG (nC) typ 16
*Reflects both static and dynamic on-resistance

Key Features

  • JEDEC qualified GaN technology
  • Dynamic RDS(on)eff production tested
  • Robust design, defined by
    • Intrinsic lifetime tests
    • Wide gate safety margin
    • Transient over-voltage capability
  • Enhanced inrush current capability
  • Very low QRR
  • Reduced crossover loss
  • RoHS-compliant and Halogen-free packaging

Key Benefits

  • Enables AC-DC bridgeless totem-pole PFC designs
    • Increased power density
    • Reduced system size and weight
    • Overall lower system cost
  • Achieves increased efficiency in both hard- and soft-switched circuits
  • Easy to drive with commonly-used gate drivers
  • GSD pin layout improves high speed design

Output Power (W)

Output Power (W)

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