The TP65H70G4PS 650V 72mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H070G4PS is offered in an industry-standard TO-220 with a common source package configuration.
Key Specifications |
VDSS (V) |
650 |
VDSS(TR) (V) |
800 |
RDS(on) (mΩ) max* |
85 |
Qrr (nC) typ |
78 |
Qg (nC) typ |
9 |
*Reflects both static and dynamic on-resistance |
Key Features
- JEDEC qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by
-
- Intrinsic lifetime tests
- Wide gate safety margin
- Transient over-voltage capability
- Very low QRR
- Reduced crossover loss
- RoHS-compliant and Halogen-free packaging
Key Benefits
- Enables AC-DC and DC-DC designs
- Increased power density
- Reduced system size and weight
- Overall lower system cost
- Achieves increased efficiency in both hard- and soft-switched circuits
- Easy to drive with commonly-used gate drivers
AN0003: Printed Circuit Board Layout and Probing for GaN FETs
AN0009: Recommended External Circuitry for Transphorm GaN FETs
AN0014: Low Cost, High Density, High Voltage Silicon Driver
DG001: LLC Resonant Tank Design for 3.3kW Electric Vehicle On-board Charger with Wide-range Output Voltage
DG004: Multi-pulse Testing for GaN Layout Verification | DG004 DSP Code
DG005: Ultrafast Overcurrent Breaker Circuit for Prototyping | DG005 Design Files
Evaluation Kits
Transphorm offers a number of GaN evaluation platforms in various topologies. The evaluation kit below features the TP65H70G4PS GaN FET:
TDTTP2500B066B-KIT – Transphorm GaN FET
Select your preferred supplier: