TransphormHighest Performance, Highest Reliability GaN

TP65H070LDG drain FETClick for source FET

650V 72mΩ GaN FET in PQFN88

OverviewDatasheetApp NotesDesign GuidesEvaluation Kits3D FilesSpice ModelQuality ReportBuy Now

The TP65H070LDG 650V 72mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

The TP65H070LDG is offered in an industry-standard PQFN88 with a common source package configuration.

Key Specifications
VDS (V) min 650
V(TR)DSS (V) max 800
RDS(on)eff (mΩ) max* 85
QRR (nC) typ 90
QG (nC) typ 10
*Reflects both static and dynamic on-resistance

Key Features

  • JEDEC-qualified GaN technology
  • Dynamic RDS(on)eff production tested
  • Robust design, defined by
    • Intrinsic lifetime tests
    • Wide gate safety margin
    • Transient over-voltage capability
  • Very low QRR
  • Reduced crossover loss
  • RoHS-compliant and Halogen-free packaging

Key Benefits

  • Enables AC-DC bridgeless totem-pole PFC designs
    • Increased power density
    • Reduced system size and weight
    • Overall lower system cost
  • Achieves increased efficiency in both hard- and soft-switched circuits
  • Easy to drive with commonly-used gate drivers
  • GSD pin layout improves high speed design

Output Power (W)

Output Power (W)

Back to top