The TP65H300G4LSG 650V 240mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s Gen IV platform. It combines state-of-the-art high voltage GaN HEMT with a low voltage Silicon MOSFET to offer superior reliability and performance.
Transphorm GaN offers improved efficiency over Silicon through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
The TP65H300G4LSG is offered in an industry-standard PQFN88 with a common source package configuration.
|VDS (V) min||650|
|VTDS (V) max||720|
|RDS(on) (mΩ) max*||312|
|Qrr (nC) typ||23|
|Qg (nC) typ||9|
AN0003: Printed Circuit Board Layout and Probing for GaN FETs
AN0009: Recommended External Circuitry for Transphorm GaN FETs
AN0010: GaN FETs in Parallel Using Drain Ferrite Beads and RC Snubbers for High-power Applications
DG002: 2.3kW High-efficiency 2-phase CRM Boost Converter for Solar Inverters
DG004: Multi-pulse Testing for GaN Layout Verification | DG004 DSP Code
DG005: Ultrafast Overcurrent Breaker Circuit for Prototyping | DG005 Design Files
Transphorm offers a number of GaN evaluation platforms in various topologies. The evaluation kit below features the TPH3206 GaN FET: