TransphormHighest Performance, Highest Reliability GaN

TP65H300G4LSG  SuperGaN

650V 240mΩ SuperGaN™ FET in PQFN88

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The TP65H300G4LSG 650V 240mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

The TP65H300G4LSG is offered in an industry-standard PQFN88 with a common source package configuration.

Key Specifications
VDS (V) min 650
VTDS (V) max 725
RDS(on) (mΩ) max* 312
Qrr (nC) typ 23
Qg (nC) typ 9.6
*Dynamic R(on)

Key Features

  • JEDEC qualified GaN technology
  • Dynamic RDS(on)eff production tested
  • Robust design, defined by
    • Intrinsic lifetime tests
    • Wide gate safety margin
    • Transient over-voltage capability
  • Very low QRR
  • Reduced crossover loss
  • RoHS-compliant and Halogen-free packaging

Key Benefits

  • Enables AC-DC and DC-DC designs
    • Increased power density
    • Reduced system size and weight
    • Overall lower system cost
  • Achieves increased efficiency in both hard- and soft-switched circuits
  • Easy to drive with commonly-used gate drivers
  • GSD pin layout improves high speed design

Application Notes

AN0002: Characteristics of Transphorm GaN Power FETs
AN0003: Printed Circuit Board Layout and Probing for GaN FETs
AN0004: Designing Hard-switched Bridges with GaN
AN0006: VGS Transient Tolerance of Transphorm GaN FETs
AN0008: Drain Voltage and Avalanche Ratings for GaN FETs
AN0009: Recommended External Circuitry for Transphorm GaN FETs
AN0010: GaN FETs in Parallel Using Drain Ferrite Beads and RC Snubbers for High-power Applications

Design Guides

DG001: LLC Resonant Tank Design for 3.3kW Electric Vehicle On-board Charger with Wide-range Output Voltage
DG004: Multi-pulse Testing for GaN Layout Verification | DG004 DSP Code
DG005: Ultrafast Overcurrent Breaker Circuit for Prototyping | DG005 Design Files

Evaluation Kits

Transphorm offers a number of GaN evaluation platforms in various topologies. The evaluation kit below features the TPH3206PSB GaN FET:

TDPV1000E0C1-KIT evaluation platform for 1kW inverter - Transphorm GaN FET

TDPV1000E0C1-KIT for 1kW inverter

Select your preferred supplier:

Buy from Digi-Key           Buy from Mouser

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