TransphormHighest Performance, Highest Reliability GaN

TPH3208PS

650V 110mΩ GaN FETs in TO-220

The TPH3208PS 650V 110mΩ Gallium Nitride (GaN) FETs is a normally-off device. It combines a state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

The TPH3208PS is offered in an industry-standard 3 lead TO-220 with a common source (PS) package configuration.

Key Specifications
VDS (V) min 650
V(TR)DSS (V) max 800
RDS(on)eff (mΩ) max* 130
QRR (nC) typ 54
QG (nC) typ 10
*Reflects both static and dynamic on-resistance

Key Features

  • JEDEC qualified GaN technology
  • Dynamic RDS(on)eff production tested
  • Robust design, defined by
    • Intrinsic lifetime tests
    • Wide gate safety margin
    • Transient over-voltage capability
  • Very low QRR
  • Reduced crossover loss
  • RoHS-compliant and Halogen-free packaging

Key Benefits

  • Enables AC-DC bridgeless totem-pole PFC designs
    • Increased power density
    • Reduced system size and weight
    • Overall lower system cost
  • Achieves increased efficiency in both hard- and soft-switched circuits
  • Easy to drive with commonly-used gate drivers
  • GSD pin layout improves high speed design

Output Power (W)

Output Power (W)

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