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650V GaN FETs
Filters: Type: Package:
| Part Number | Vds (V) min |
Rds(on)eff (mΩ) typ |
Rds(on)eff (mΩ) max |
Id (25°C) (A) max |
Package | Package Variation |
Datasheet | Buy Now |
|---|---|---|---|---|---|---|---|---|
| TP65H035G4WS | 650 | 35 | 41 | 46.5 | TO-247 | Source | Datasheet | Buy Now |
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| TP65H035G4WSQA | 650 | 35 | 41 | 46.5 | TO-247 | Source | Datasheet | Buy Now |
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| TP65H035WS | 650 | 35 | 41 | 46.5 | TO-247 | Source | Datasheet | Buy Now |
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| TP65H050G4WS | 650 | 50 | 60 | 34 | TO-247 | Source | Datasheet | Buy Now |
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| TP65H050G4BS | 650 | 50 | 60 | 34 | TO-263 | Source | Datasheet | Buy Now |
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| TP65H035WSQA | 650 | 35 | 41 | 47 | TO-247 | Source | Datasheet | Buy Now |
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| TP65H050WSQA | 650 | 50 | 60 | 36 | TO-247 | Source | Datasheet | Buy Now |
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| TP65H050WS | 650 | 50 | 60 | 36 | TO-247 | Source | Datasheet | Buy Now |
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| TP65H070LSG | 650 | 72 | 85 | 25 | PQFN88 | Source | Datasheet | Buy Now |
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| TP65H070LDG | 650 | 72 | 85 | 25 | PQFN88 | Drain | Datasheet | Buy Now |
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| TP65H150G4PS | 650 | 150 | 180 | 13 | TO-220 | Source | Datasheet | Buy Now |
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| TP65H150G4LSG | 650 | 150 | 180 | 13 | PQFN88 | Source | Datasheet | Buy Now |
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| TP65H300G4LSG | 650 | 240 | 312 | 6.5 | PQFN88 | Source | Datasheet | Buy Now |
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| TP65H480G4JSG | 650 | 480 | 560 | 3.6 | PQFN56 | Source | Datasheet | Buy Now |
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| TP65H015G5WS | 650 | 15 | 18 | 95 | TO-247 | Source | Datasheet | Buy Now |
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Products with markings referencing this web page are subject to one or more patents listed in Exhibit A and/or one or more of the patents listed in Exhibit B
Featured Product
TPH3212: New 72mΩ GaN FET delivers up to 40% increase in power density and unmatched gate safety margin
Product Profile Datasheet Buy Now Eval Kit
The newest device in Transphorm’s 2nd generation 650V GaN portfolio, TPH3212PS, is available in a TO-220 package with an R(on) of 72mΩ, and as with the entire GaN family, makes implementing bridgeless totem-pole PFC designs possible—delivering increased efficiency, smaller size and lower system cost.
TPH3212PS features and benefits
- Smaller system size: Up to 40% increase in power density
- Industry-best ±18V gate drive: Increased gate safety margin using off-the-shelf gate drivers
- Higher system efficiency: Up to 4x faster switching over silicon
- Reduced overall system cost: Eliminate the bridge rectifier, parallel FETs and additional passives with a bridgeless totem-pole PFC design
GaN Efficiency
Need for speed—GaN operates at higher frequencies with up to 4x faster switching to lower crossover losses and increase system efficiency
Feel the power—GaN in a totem-pole configuration lowers component count and EMI filter size to deliver the same power in a smaller footprint
Smaller, lighter, cooler—Higher efficiency and increased power density means lower overall system cost