TransphormHighest Performance, Highest Reliability GaN

900V GaN FETs

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Part Number Vds (V)
min
Rds(on)eff
(mΩ) typ
Rds(on)eff
(mΩ) max
Id (25°C) (A)
max
Package Package
Variation
Datasheet Buy
Now
TP90H180PS 900 170 205 15 TO-220 Source Datasheet Buy Now
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Part Number Vds (V)
min
Rds(on)eff
(mΩ) typ
Rds(on)eff
(mΩ) max
Id (25°C) (A)
max
Package Package
Variation
Datasheet Sample
Request
TP90H050WS** 900 50 63 34 TO-247 Source Datasheet Request
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Products with markings referencing this web page are subject to one or more patents listed in Exhibit A and/or one or more of the patents listed in Exhibit B

GaN Efficiency

Need for speed—GaN operates at higher frequencies with up to 4x faster switching to lower crossover losses and increase system efficiency

Feel the power—GaN in a totem-pole configuration lowers component count and EMI filter size to deliver the same power in a smaller footprint

Smaller, lighter, cooler—Higher efficiency and increased power density means lower overall system cost

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