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Automotive (AEC-Q101) Qualified GaN FETs
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Devices
| Part Number | Vds (V) min |
Rds(on) (mΩ) typ |
Rds(on) (mΩ) max |
Vth (V) typ |
Id (25°C) (A) max |
Package | Package Variation |
Datasheet | Buy Now |
|---|---|---|---|---|---|---|---|---|---|
| TP65H035G4WSQA | 650 | 35 | 41 | 4 | 46.5 | TO-247 | Source | Datasheet | Buy Now |
Best-in-class reliability  Select your preferred supplier:  |
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| TP65H035WSQA | 650 | 35 | 41 | 4 | 47 | TO-247 | Source | Datasheet | Buy Now |
| Best-in-class reliability Select your preferred supplier: |
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| TP65H050WSQA | 650 | 50 | 60 | 4 | 36 | TO-247 | Source | Datasheet | Buy Now |
| Best-in-class reliability Select your preferred supplier: |
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Products with markings referencing this web page are subject to one or more patents listed in Exhibit A and/or one or more of the patents listed in Exhibit B
Featured Product
TP65H035WSQA: World’s first 175C automotive-qualified GaN
Product Profile Datasheet Buy Now
The TP65H035WSQA The TP65H035WSQA 650V 35mΩ GaN FET is the industry’s first 175 C GaN solution to earn AEC-Q101 qualification, delivering the system size, weight, performance and cost benefits of GaN to in-vehicle power electronics.
Key automotive system benefits
- Up to 40% more power density
- Up to 20% lower overall system cost
- Increased efficiency, lower thermal budget, reduced system weight
- High volume manufacturing with 6″ GaN-on-Si
Key automotive applications
- AC-DC conversion for electric vehicle on-board chargers
- Auxiliary high voltage DC-DC conversion in air conditioning, heating, power steering and oil pumps
Design resources
- App Note 0009: Recommended External Circuitry for GaN FETs
- App Note 0010: Paralleling GaN FETs
- TP65H035WSBQA SPICE model
DG001: LLC Resonant Tank Design for 3.3kW Electric Vehicle On-board Charger with Wide-range Output Voltage
DG007: 200 kHz Phase Shift Full Bridge for 3.3kW Electric Vehicle On-board Charger
DG008: 100 kHz Dual Active Bridge for 3.3kW Bi-directional Battery Charger | DG008 Design Files
GaN Efficiency
Need for speed—GaN operates at higher frequencies with up to 4x faster switching to lower crossover losses and increase system efficiency
Feel the power—GaN in a totem-pole configuration lowers component count and EMI filter size to deliver the same power in a smaller footprint
Smaller, lighter, cooler—Higher efficiency and increased power density means lower overall system cost