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Introducing the TP65H035G4WSQA FET
SuperGaN®Gen IV Device
Now Automotive Qualified
• 650 V 35 mΩ FET
• Qualified up to 175°C
• Thermally superior TO-247 package
New Evaluation Board & Development Kit
130W ACF SuperGaN®
USB-C PD Adapter
• SuperGaN® FETs with Diodes Inc. ACF Controllers
• PPS fast charging supported
• High power peak efficiency: > 93.5%
• Full load efficiency: 91.4% @ 90 Vac
SuperGaN® Design Innovation
Qualcomm Quick Charge 5
Compliant Adapter.
• 100 W USB-C PD PPS charger
• 0 to 50% charge in 5 minutes
• Used in both AC to DC (PFC) and DC to DC (QRF) topologies
Head-to-head comparison
Datasheets don’t tell
the whole story.
• SuperGan FET vs. e-mode FET
• 65 W USB PD charger application
• SuperGaN: higher efficiency, lower losses
Sampling Soon from Fujitsu General Electronics
Industry’s First Small GaN Modules
2 Module Options: 4 GaN FETs or 6 GaN FETs
• Transphorm’s 650 V GaN FETs + integrated drive circuit
• Full-bridge configuration
• FGEL design and mounting modularization technology
New Design Resource Now Available
65W USB-C PD GaN Adapter
Reference Design.
- Active clamp flyback PWM controller
with SuperGaN® FET - 30W/in3 Power Density
- 94.5% Efficiency
Teardown: Helpers Lab 65 W GaN Charger
Transphorm’s 240 mΩ FET
Outperforms e-mode GaN devices.
TP65H300G4LSG delivers 65 W performance with:
- Greater efficiency
- Higher power density
No Two Wide Bandgap
Technologies Are The Same.
- Greater Efficiency
- Higher Power Operation
- Lower Switching Losses
- Lower Temperature Operation
Six Server Power Supplies, One GaN Platform
Bel Power’s Titanium
TET Series Family
for Data Centers
• 1.5 – 3.2 kW product options
• > 96% efficiency (≥ 99% PFC efficiency)
• 31.7 – up to 62 W/in3 power density
High Voltage GaN Devices You Can Trust
Industry-Leading GaN Reliability
• Field Reliability Rate: < 1 FIT
• Early Life Failure Rate: < 1 FIT
• Field Operation Hours: > 10B
New Evaluation Board
4 kW Bridgeless Totem-pole PFC Board
With Microchip’s dsPIC®
• > 99% efficiency
• Pre-programmed firmware
• Microchip dev tools, global support access
TDTTP4000W065AN Evaluation Board
GaN Using Analog Control
for Bridgeless Totem-pole PFC
• Suitable for Standard CCM Boost topology
• > 99% efficient SuperGaN™ 650 V FETs
• Simpler power system design
IN PRODUCTION TICKER
Transphorm Wire
NewsNov 11 2021(English) Transphorm’s SuperGaN Gen IV Multi-Kilowatt Class Power FET Earns Automotive QualificationNewsNov 11 2021(English) Sino-American Silicon Products (SAS) invests $15 million to TransphormNewsNov 11 2021(English) Referencedesign for ACF-baseret 65W 1C hurtiglader
NewsNov 11 2021(English) SAS invests in US-based TransphormNewsNov 10 2021(English) Diodes launches USB-C development kitPress ReleaseNov 10 2021(English) Transphorm Announces Fiscal Second Quarter 2022 Financial Results
NewsNov 10 2021(English) Transphorm’s SuperGaN Gen IV multi-kW-class power FET gains AEC-Q101 qualificationNewsNov 10 2021(English) Transphorm completes $23m private placement with KKR and US institutional investorsNewsNov 10 2021(English) Sino-American Silicon Products invests in Transphorm
NewsNov 10 2021(English) Development kit covers 130-W USB-C power adapter designsNewsNov 10 2021(English) Transphorm’s SuperGaN Gen IV Multi-Kilowatt Class Power FET Earns Automotive QualificationPress ReleaseNov 10 2021(English) Transphorm’s SuperGaN Gen IV Multi-Kilowatt Class Power FET Earns Automotive Qualification
Press ReleaseNov 10 2021(English) Sino-American Silicon Products (SAS) Makes $15 Million Investment in Transphorm as Part of a New Strategic PartnershipPress ReleaseNov 9 2021(English) Transphorm Announces Closing of $23 Million Private Placement of Common Stock to KKR and U.S. Institutional InvestorsNewsNov 9 2021(English) Diodes Inc and Transphorm introduce 130W ACF SuperGaN USB-C PD adapter evaluation kit