Third Evaluation Board with Microchip Support

3 kW Inverter Board With
Microchip Digital
Signal Controller

• ~99% power efficiency 
• Non-isolated full bridge topology 
• Microchip dev tools, global support access 

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New Integrated GaN Device

Weltrend SuperGaN SiP

• Multi-mode flyback PWM controller +
  240 mΩ SuperGaN^® FET
• Power density of 26 W/in³
• Supports 45 to 100 W USB-C
  power adapters

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One Core Platform,
Crossing the Power Spectrum

We’re leading
the GaN Revolution.

Visit us at Booth 853 to learn why.

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ChargerLAB Teardown

HP 65W GaN USB-C
Laptop Charger

• TP65H300G4LSG SuperGaN^® FET
• Dual USB-C PD PPS fast charger
• Labeled “Powerfully Petite” and
  “Tiny but Mighty”

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New Design Resource

240W Power Adapter
Reference Design

• 650V 150mΩ SuperGaN FET
• 96% peak power efficiency
• 30 W/in³ power density
• CCM Boost PFC + Half Bridge LLC topology

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Another Milestone

Our GaN Reliability
Just Got Better

• < 0.1 FIT
• 85 billion hours of field operation
• Low and high power breakdown available

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Supply Contract Awarded

Novel Four-Quadrant GaN Switch

• Bidirectional current flow
• Bidirectional voltage control
• 650V device in 4-pin TO-247 package

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New 2C1A SuperGaN® Power Adapter

65W 3-Port USB-C Adapter

• UDB PD and PPS functionality
• 17% lower power loss
• 240 mΩ PQFN88 GaN FET

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New Higher Power Surface Mount Device

SuperGaN^® FET in a D2PAK

• 50 mOhm typical on-resistance
• ±20 Vmax gate robustness, 4V threshold
• For data center, broad industrial systems

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SuperGaN® Reference Design Portfolio

Kick-Start USB-C PD
Power Adapter Development

• 45W to 140W adapters
• Open frame design tools
• ≥ 93.5% power efficiency

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GaN in High Reliability Medical Devices

Li-ion Battery Power
Storage System

• 650V 35 mΩ GaN FET
• 99% power efficiency
• 73% reduction in power loss
• Fanless, hermetically sealed system

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New High Efficiency Compute PSU

Boco Electronics’
3.6 kW Power Supply

• Uses SuperGaN® Gen IV FETs
• Achieves 96% power efficiency
• Designed for demanding applications,
  rugged environments

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TDK-Lambda Expands PF500F Series

99% GaN Increases
Modules’ Power Density

• 72 mΩ PQFN device
• 38% power density increase
• 6% power efficiency increase

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GaN Technology Preview

99% Efficiency with
New 1200V FET

• Rivals SiC solutions
• Optimized for Electric Vehicle
  and Renewable systems
• To be introduced at ISPSD 2022

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Second Evaluation Board with Microchip Support

2.5 kW Bridgeless Totem-pole PFC Board
With Microchip’s dsPIC^®

• Swappable daughter card for 50 mΩ
  or 72 mΩ FET evaluation
• Pre-programmed firmware
• Microchip dev tools, global support access

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Head-to-head comparison

Datasheets don’t tell
the whole story.

• SuperGan FET vs. e-mode FET
• 65 W USB PD charger application
• SuperGaN: higher efficiency, lower losses

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No Two Wide Bandgap
Technologies Are The Same.

• Greater Efficiency
• Higher Power Operation
• Lower Switching Losses
• Lower Temperature Operation

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SuperGaN^® Design Innovation

Qualcomm Quick Charge 5
Compliant Adapter.

• 100 W USB-C PD PPS charger
• 0 to 50% charge in 5 minutes
• Used in both AC to DC (PFC) and DC to DC (QRF) topologies

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