SuperGaN® Reference Design Portfolio

Kick-Start USB-C PD
Power Adapter Development

• 45W to 140W adapters
• Open frame design tools
• ≥ 93.5% power efficiency

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GaN in High Reliability Medical Devices

Li-ion Battery Power
Storage System

• 650V 35 mΩ GaN FET
• 99% power efficiency
• 73% reduction in power loss
• Fanless, hermetically sealed system

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New High Efficiency Compute PSU

Boco Electronics’
3.6 kW Power Supply

• Uses SuperGaN® Gen IV FETs
• Achieves 96% power efficiency
• Designed for demanding applications,
  rugged environments

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TDK-Lambda Expands PF500F Series

99% GaN Increases
Modules’ Power Density

• 72 mΩ PQFN device
• 38% power density increase
• 6% power efficiency increase

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GaN Technology Preview

99% Efficiency with
New 1200V FET

• Rivals SiC solutions
• Optimized for Electric Vehicle
  and Renewable systems
• To be introduced at ISPSD 2022

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Second Evaluation Board with Microchip Support

2.5 kW Bridgeless Totem-pole PFC Board
With Microchip’s dsPIC^®

• Swappable daughter card for 50 mΩ
  or 72 mΩ FET evaluation
• Pre-programmed firmware
• Microchip dev tools, global support access

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Introducing the TP65H035G4WSQA FET

SuperGaN^®Gen IV Device
Now Automotive Qualified

• 650 V 35 mΩ FET
• Qualified up to 175°C
• Thermally superior TO-247 package

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Head-to-head comparison

Datasheets don’t tell
the whole story.

• SuperGan FET vs. e-mode FET
• 65 W USB PD charger application
• SuperGaN: higher efficiency, lower losses

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No Two Wide Bandgap
Technologies Are The Same.

• Greater Efficiency
• Higher Power Operation
• Lower Switching Losses
• Lower Temperature Operation

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SuperGaN^® Design Innovation

Qualcomm Quick Charge 5
Compliant Adapter.

• 100 W USB-C PD PPS charger
• 0 to 50% charge in 5 minutes
• Used in both AC to DC (PFC) and DC to DC (QRF) topologies

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