Forget Your Password? Sign In.
Second Evaluation Board with Microchip Support
2.5 kW Bridgeless Totem-pole PFC Board
With Microchip’s dsPIC®
- Swappable daughter card for 50 mΩ
or 72 mΩ FET evaluation - Pre-programmed firmware
- Microchip dev tools, global support access
Introducing the TP65H035G4WSQA FET
SuperGaN®Gen IV Device
Now Automotive Qualified
• 650 V 35 mΩ FET
• Qualified up to 175°C
• Thermally superior TO-247 package
New Evaluation Board & Development Kit
130W ACF SuperGaN®
USB-C PD Adapter
• SuperGaN® FETs with Diodes Inc. ACF Controllers
• PPS fast charging supported
• High power peak efficiency: > 93.5%
• Full load efficiency: 91.4% @ 90 Vac
SuperGaN® Design Innovation
Qualcomm Quick Charge 5
Compliant Adapter.
• 100 W USB-C PD PPS charger
• 0 to 50% charge in 5 minutes
• Used in both AC to DC (PFC) and DC to DC (QRF) topologies
Head-to-head comparison
Datasheets don’t tell
the whole story.
• SuperGan FET vs. e-mode FET
• 65 W USB PD charger application
• SuperGaN: higher efficiency, lower losses
Sampling Soon from Fujitsu General Electronics
Industry’s First Small GaN Modules
2 Module Options: 4 GaN FETs or 6 GaN FETs
• Transphorm’s 650 V GaN FETs + integrated drive circuit
• Full-bridge configuration
• FGEL design and mounting modularization technology
New Design Resource Now Available
65W USB-C PD GaN Adapter
Reference Design.
- Active clamp flyback PWM controller
with SuperGaN® FET - 30W/in3 Power Density
- 94.5% Efficiency
Teardown: Helpers Lab 65 W GaN Charger
Transphorm’s 240 mΩ FET
Outperforms e-mode GaN devices.
TP65H300G4LSG delivers 65 W performance with:
- Greater efficiency
- Higher power density
No Two Wide Bandgap
Technologies Are The Same.
- Greater Efficiency
- Higher Power Operation
- Lower Switching Losses
- Lower Temperature Operation
Six Server Power Supplies, One GaN Platform
Bel Power’s Titanium
TET Series Family
for Data Centers
• 1.5 – 3.2 kW product options
• > 96% efficiency (≥ 99% PFC efficiency)
• 31.7 – up to 62 W/in3 power density
High Voltage GaN Devices You Can Trust
Industry-Leading GaN Reliability
• Field Reliability Rate: < 1 FIT
• Early Life Failure Rate: < 1 FIT
• Field Operation Hours: > 10B
New Evaluation Board
4 kW Bridgeless Totem-pole PFC Board
With Microchip’s dsPIC®
• > 99% efficiency
• Pre-programmed firmware
• Microchip dev tools, global support access
TDTTP4000W065AN Evaluation Board
GaN Using Analog Control
for Bridgeless Totem-pole PFC
• Suitable for Standard CCM Boost topology
• > 99% efficient SuperGaN™ 650 V FETs
• Simpler power system design
IN PRODUCTION TICKER
Transphorm Wire
Press ReleaseNov 30 2021(English) Transphorm Releases Second Totem Pole Evaluation Board with Microchip’s Digital Signal Processing TechnologyNewsNov 11 2021(English) Transphorm’s SuperGaN Gen IV Multi-Kilowatt Class Power FET Earns Automotive QualificationNewsNov 11 2021(English) Sino-American Silicon Products (SAS) invests $15 million to Transphorm
NewsNov 11 2021(English) Referencedesign for ACF-baseret 65W 1C hurtigladerNewsNov 11 2021(English) SAS invests in US-based TransphormNewsNov 10 2021(English) Diodes launches USB-C development kit
Press ReleaseNov 10 2021(English) Transphorm Announces Fiscal Second Quarter 2022 Financial ResultsNewsNov 10 2021(English) Transphorm’s SuperGaN Gen IV multi-kW-class power FET gains AEC-Q101 qualificationNewsNov 10 2021(English) Transphorm completes $23m private placement with KKR and US institutional investors
NewsNov 10 2021(English) Sino-American Silicon Products invests in TransphormNewsNov 10 2021(English) Development kit covers 130-W USB-C power adapter designsNewsNov 10 2021(English) Transphorm’s SuperGaN Gen IV Multi-Kilowatt Class Power FET Earns Automotive Qualification
Press ReleaseNov 10 2021(English) Transphorm’s SuperGaN Gen IV Multi-Kilowatt Class Power FET Earns Automotive QualificationPress ReleaseNov 10 2021(English) Sino-American Silicon Products (SAS) Makes $15 Million Investment in Transphorm as Part of a New Strategic PartnershipPress ReleaseNov 9 2021(English) Transphorm Announces Closing of $23 Million Private Placement of Common Stock to KKR and U.S. Institutional Investors