TransphormHighest Performance, Highest Reliability GaN

Highest Quality, Highest Reliability GaN

Now Trading on the Market

• Symbol: TGAN

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Virtual Booth Exhibit

Hosted in HY-LINE’s Aktive & Passive Bauteile Room

  • SuperGaN™ FETs
  • 4 kW Totem-pole PFC Evaluation Board
    with Microchip's dsPIC® Digital Power PIM
  • Technical Videos

Visit Virtual Exhibit

Increased Performance, Same Trusted Reliability

Introducing SuperGaN™ Power FETs

• Gen IV GaN platform
• +/- 20 V gate robustness*
• 4 V threshold*

*35 mΩ FET ratings; 240 mΩ FET also available

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New Evaluation Board

4 kW Bridgeless Totem-pole PFC Board
With Microchip’s dsPIC®

• > 99% efficiency
• Pre-programmed firmware
• Microchip dev tools, global support access

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HZZH’s Flagship 3 kW ZHR483KS

Telecom’s Ultra-Efficient
GaN Power Module

• 98% efficiency
• 42 V to 58 V power output
• Swappable with standardly configured modules

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Aviation’s First Passively Cooled
(Fanless) 420 W Power Supply

AES’ PS250X PSU

• 10% more efficient than competition
• 3 lbs product weight
• Airbus A318-A321, A330, A340, A380
• Boeing B767, B787 VIP

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Transphorm:
The Highest Quality GaN FETs
Powering Next Gen
Power Adapters

Quality & Reliability

IN PRODUCTION TICKER

Transphorm Wire

<<>>
Press ReleaseAug 3 2020(English) Transphorm to Commence Trading on OTC Market Under Symbol “TGAN”Press ReleaseApr 14 2020(English) Transphorm Introduces SuperGaN™ Power FETs with Launch of Gen IV GaN PlatformPress ReleaseApr 6 2020(English) Transphorm and Microchip Combine High Reliablity GaN and Digital Signal Processing Technology to Drive GaN Adoption
Press ReleaseMar 17 2020(English) Transphorm’s GaN Used in HZZH’s 98 Percent Efficient Power ModuleNewsMar 4 2020(English) Marelli Boosts Investment in Electric Vehicle Technologies Through Partnership With Us Technology Firm, Transphorm Inc.Press ReleaseMar 3 2020(English) Transphorm Inc. Raises $21 Million and Completes Reverse Merger
NewsMar 2 2020(English) GaN Type Determines Design BenefitsNewsFeb 28 2020(English) Transphorm to Showcase Broad Market Adoption of High Voltage GaN Power at APEC 2020NewsFeb 28 2020(English) Transphorm showcasing market adoption of high-voltage GaN power at APEC
NewsFeb 25 2020(English) Nexperia Partners with Ricardo to Develop Gallium Nitride Based EV Inverter DesignNewsFeb 13 2020(English) Transphorm to show Adoption of High Voltage GaN at APEC 2020 – NewsPress ReleaseFeb 12 2020(English) Transphorm to Showcase Broad Market Adoption of High Voltage GaN Power at APEC 2020
NewsFeb 5 2020(English) Power Supplies and Snubber CapsNewsJan 10 2020(English) Power GaN achieves its first milestoneNewsJan 8 2020(English) New Semiconductor Technologies Driving Down Cost Of Electric Vehicle Batteries
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Transphorm prioritizes Quality + Reliability. To ensure our Q+R, we innovate at each stage within the FET development process—design, fabrication, device, and application support. The result? Customers produce groundbreaking, high performing GaN-based products that reimagine what’s possible with power. Welcome to the GaN Revolution.