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240W Power Adapter
Reference Design
- 650V 150mΩ SuperGaN FET
- 96% peak power efficiency
- 30 W/in3 power density
- CCM Boost PFC + Half Bridge LLC topology
Another Milestone
Our GaN Reliability
Just Got Better
- < 0.1 FIT
- 85 billion hours of field operation
- Low and high power breakdown available
Supply Contract Awarded
Novel Four-Quadrant GaN Switch
- Bidirectional current flow
- Bidirectional voltage control
- 650V device in 4-pin TO-247 package
New 2C1A SuperGaN® Power Adapter
65W 3-Port USB-C Adapter
- UDB PD and PPS functionality
- 17% lower power loss
- 240 mΩ PQFN88 GaN FET
New Higher Power Surface Mount Device
SuperGaN® FET in a D2PAK
- 50 mOhm typical on-resistance
- ±20 Vmax gate robustness, 4V threshold
- For data center, broad industrial systems
SuperGaN® Reference Design Portfolio
Kick-Start USB-C PD
Power Adapter Development
- 45W to 140W adapters
- Open frame design tools
- ≥ 93.5% power efficiency
GaN in High Reliability Medical Devices
Li-ion Battery Power
Storage System
- 650V 35 mΩ GaN FET
- 99% power efficiency
- 73% reduction in power loss
- Fanless, hermetically sealed system
New High Efficiency Compute PSU
Boco Electronics’
3.6 kW Power Supply
- Uses SuperGaN® Gen IV FETs
- Achieves 96% power efficiency
- Designed for demanding applications,
rugged environments
TDK-Lambda Expands PF500F Series
99% GaN Increases
Modules’ Power Density
- 72 mΩ PQFN device
- 38% power density increase
- 6% power efficiency increase
GaN Technology Preview
99% Efficiency with
New 1200V FET
- Rivals SiC solutions
- Optimized for Electric Vehicle
and Renewable systems - To be introduced at ISPSD 2022
Second Evaluation Board with Microchip Support
2.5 kW Bridgeless Totem-pole PFC Board
With Microchip’s dsPIC®
- Swappable daughter card for 50 mΩ
or 72 mΩ FET evaluation - Pre-programmed firmware
- Microchip dev tools, global support access
Head-to-head comparison
Datasheets don’t tell
the whole story.
• SuperGan FET vs. e-mode FET
• 65 W USB PD charger application
• SuperGaN: higher efficiency, lower losses
No Two Wide Bandgap
Technologies Are The Same.
- Greater Efficiency
- Higher Power Operation
- Lower Switching Losses
- Lower Temperature Operation
SuperGaN® Design Innovation
Qualcomm Quick Charge 5
Compliant Adapter.
• 100 W USB-C PD PPS charger
• 0 to 50% charge in 5 minutes
• Used in both AC to DC (PFC) and DC to DC (QRF) topologies
IN PRODUCTION TICKER
Transphorm Wire
EventJan 24 2023(English) DesignCon 2023Press ReleaseJan 12 2023(English) Transphorm to Present at 25th Annual Needham Growth ConferencePress ReleaseJan 11 2023(English) Powerics to Preview GaN Power Charger with Transphorm FETs at VLSID 2023
Press ReleaseJan 5 2023(English) Transphorm Releases Compact 240W Power Adapter Reference Design with Industry’s Only High Performance TO-220 GaN FETsPress ReleaseDec 15 2022(English) Transphorm Releases New GaN FET Reliability Ratings, Now Segmented by Power LevelPress ReleaseDec 12 2022(English) Transphorm to Present at Upcoming December Investor Conference
EventDec 8 2022(English) VLSID 2023EventDec 8 2022(English) CII – Automotive Electrical and Electronics SummitEventDec 8 2022(English) Bodo’s Wide Bandgap Online Event
EventDec 8 2022(English) 6th International Conference on Emerging ElectronicsPress ReleaseDec 1 2022(English) Transphorm Expands Footprint with GaN Application Lab in ChinaPress ReleaseNov 9 2022(English) Transphorm Announces Fiscal 2023 Second Quarter Financial Results and Provides Business Update
Press ReleaseOct 27 2022(English) Transphorm Appoints Six Company LeadersPress ReleaseOct 26 2022(English) Transphorm to Announce Fiscal 2023 Second Quarter Financial Results and Host Business Update Call on November 9th at 5:00pm ETEventSep 14 2022(English) EU Power Semiconductor Executive Summit (EU PSES)