Welcome to the GaN Revolution!
Transphorm is a global semiconductor company, leading the GaN Revolution with the highest performance, highest reliability GaN devices for high voltage power conversion applications. To ensure this, Transphorm deploys its unique vertically-integrated business approach that leverages the industry’s most experienced GaN engineering team at every development stage: design, fabrication, device and application support. This approach, backed by one of the industry’s largest IP portfolios with over 600 patents, has yielded the industry’s only JEDEC- and AEC-Q101-qualified GaN FETs. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost—and here’s how we do it.
Transphorm is dedicated to educating and supporting customers developing with high voltage GaN. Let us know how we can help you!
Since its founding in 2007, Transphorm has achieved a number of milestones and industry firsts.
First samples of 600V GaN-on-SiC with no current collapse/dynamic Ron
First 600V GaN-on-Si
First JEDEC qualified high voltage GaN
IP and manufacturing partnership with Fujitsu Semiconductor Japan
First generation GaN products in production
First customers in production
First long-term intrinsic lifetime testing for GaN established
Second generation GaN products in production
First automotive (AEC-Q101) qualified GaN