TransphormHighest Performance, Highest Reliability GaN

Design Resources

Power Adapter (Open Frame) Reference Designs

Part Number Topology Output(s) Power (W) Frequency (kHz) Power Density (W/in3) GaN FET(s)
TDADP-SIL-USBC-65W-RD ACF USB-C PD 65 Up to 140 30 TP65H300G4LSG
TDADP-TPH-ON-USBC-65W-RD QRF USB-C PD 65 Up to 300 30 TP65H300G4LSG

Partner Power Adapter Designs using Transphorm GaN

Part Number Partner Topology Output(s) Power (W) Frequency (kHz) Power Density (W/in3) GaN FET(s)
RD-29 Silanna ACF USB-C PD 65 146 29.8 (English) TP65H300G4LSG
ACF+GaN EVB1 Diodes Inc PFC + ACF USB-C PD/PPS 130 110 + 140 Up to 20 TP65H150G4LSG
ACF+GaN EVB2 Diodes Inc ACF USB-C PD/PPS 65 140 29 (English) TP65H150G4LSG

GaN Efficiency

Need for speed—GaN operates at higher frequencies with up to 4x faster switching to lower crossover losses and increase system efficiency

Feel the power—GaN in a totem-pole configuration lowers component count and EMI filter size to deliver the same power in a smaller footprint

Smaller, lighter, cooler—Higher efficiency and increased power density means lower overall system cost

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