TransphormHighest Performance, Highest Reliability GaN

The SuperGaN® Technology Difference     SuperGaN

When designing Gen IV, Transphorm’s engineering team drew on learnings from production ramps of previous products, coupled with a constant drive for performance, manufacturability, and cost reduction to design a new product with ultimate simplicity and substantial improvements. The new platform’s patented technology delivers benefits that augment Transphorm’s intrinsic GaN performance and simplicity both in assembly and applications, which is the catalyst for the SuperGaN® brand.

Driven by its patented technology, SuperGaN Gen IV benefits include:

  • Increased Performance: Gen IV provides a flatter and higher efficiency curve with an improved Figure of Merit (RON*QOSS) of approximately 10 percent.
  • Easier Designability: Gen IV offers increased simplicity of design-in by removing the need for a switching node snubber at high operation currents.
  • Enhanced Inrush Current Capability (di/dt):Gen IV removes the switching current limits for the built-in freewheeling diode function in half bridges.
  • Reduced Device Cost: Gen IV’s design innovations and patented technology simplify device assembly, too. The resulting cost adjustments continue to bring Transphorm’s GaN closer to Silicon transistor pricing.
  • Proven Robustness/Reliability: Gen IV’s 35 mΩ FET offers the same gate robustness of +/- 20 Vmax and noise immunity of 4 V that is currently delivered by Transphorm’s Gen III devices.

Transphorm Quality and Reliability

Industry Leading Gan Reliability

Field Reliability Data


Failures per Billion Hours (FIT)

Field Hours


Quality + Reliability Webinar

High voltage GaN transistors increase power density while reducing system size and cost. However, GaN FET validation differs from that of Silicon FETs.

Listen to Transphorm’s Q+R expert as he explains how GaN devices should be validated; the target baseline results for infant mortality, FIT rates, etc.; and how these metrics impact end systems.

Cascode vs. e-mode

Our Q+R is in large part enabled by our design choice. Today, cascode is the only configuration proven to enable GaN in real-world applications. Transphorm’s GaN is backed by extensive lifetime, quality and reliability data—unavailable with other configurations today, such as pGaN e-mode.

Not all GaN is alike.

Comparing Transphorm cascode to today’s e-mode.

Attribute Cascode (Transphorm)* e-mode (market)*
Quality, reliability, lifetime performance Extended JEDEC, AEC-Q101, lifetime testing Limited data
Device breakdown voltage (TJ = 150°C) 650 V (qualified), 1200 V (measured) 500 V and 600 V (measured
Maximum transient protection 800 V 750 V
Gate drive safety margin (RON @ VGS) 10 V 1 V
Gate drive noise immunity 4.0 V (typical) 1.7 V (typical)
Negative gate drive required No Yes
Slew rate control Yes Yes
Reverse conduction operation (VSD) 2.2 V to 2.6 V 6 V to 9 V (defined by gate drive)
Saturation current limit (TJ = 150°C) > 3x higher than e-mode Reduced channel and gate charge
Paralleling Up to two TO-XXX devices More than two devices possible
FOM (RON * QOSS) Industry standard Minimal increase with reduced Q+R
Die size Industry standard Smaller with reduced Q+R
Thermal performance (72 mΩ) 50°C at 1500 W
83°C at 2526 W
80°C at 1500 W

*Unless specified, data is based on a 50 mΩ device.


High-voltage GaN technology benefits numerous markets that require reliable higher efficiency, higher performance power conversion. The highest adoption rates are projected for the following application areas:

Infrastructure and IT
Power Supplies

Increases clean power output in standardized server and telecom form factors.

Consumer and Computing
Adapters, Gaming Power Supplies

Improved efficiencies result in lower thermals, improved power density and lower system cost.

Broad Industrial
Battery Chargers, UPS

Reduces size and weight of systems that run industrial factories, charge battery powered forklifts, electric vehicles and keep critical data accessible..

Electric Vehicles, Charging

Generates longer distance per charge with a lower overall system cost.

Mobile Adapters, RF Material

Enables hyper fast charging of 5G-enabled devices while also producing N-polar GaN Epi, starting material for high efficiency RF solutions up to 94 GHz.

Customers in Production

Transphorm’s customers currently produce end products for various market applications. A few examples can be found below.



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