TransphormHighest Performance, Highest Reliability GaN

TP65H480G4JSGB  SuperGaN

650V 480mΩ SuperGaN® FET in PQFN56

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The TP65H480G4JSGB 650V 480mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

The TP65H480G4JSGB is offered in an industry-standard PQFN56 with a common source package configuration.

Key Specifications
VDSS (V) 650
VDSS(TR) (V) 800
RDS(on) (mΩ) max* 480
Qrr (nC) typ 15.2
Qg (nC) typ 5
*Reflects both static and dynamic on-resistance

Output Power (W)

Output Power (W)

Key Features

  • Gen IV technology
  • JEDEC qualified GaN technology
  • Dynamic RDS(on)eff production tested
  • Robust design, defined by
    • Wide gate safety margin
    • Transient over-voltage capability
  • Very low QRR
  • Reduced crossover loss
  • RoHS-compliant and Halogen-free packaging

Key Benefits

  • Achieves increased efficiency in both hard- and soft-switched circuits
    • Increased power density
    • Reduced system size and weight
    • Overall lower system cost
  • Easy to drive with commonly-used gate drivers
  • GSD pin layout improves high speed design
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