TransphormHighest Performance, Highest Reliability GaN

TP65H150LSG

600V 150mΩ GaN FET in PQFN88

The TP65H150LSG 650V 150mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge, faster switching speeds, and smaller reverse recovery charge, delivering significant advantages over traditional silicon (Si) devices. The TP65H150LSG is offered in an industry-standard 8×8 PQFN with a common source package configuration.

Key Specifications
VDS (V) min 600
VTDS (V) max 800
RDS(on) (mΩ) max* 180
Qrr (nC) typ 47
Qg (nC) typ 10
*Dynamic R(on)

 

TDPV1000E0C1-KIT evaluation platform for 1kW inverter - Transphorm GaN FET

Output Power (W)

Output Power (W)

Key Features

  • Easy to drive—compatible with standard gate drivers
  • Low conduction and switching losses
  • Low Qrr of 47nC—no free-wheeling diode required
  • JEDEC-qualified GaN technology
  • RoHS compliant and Halogen-free

Key Benefits

  • Enables more efficient topologies—easy to implement bridgeless totem-pole designs
  • Increased efficiency through fast switching
  • Increased power density
  • Reduced system size and weight
  • Lower BOM cost
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