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900V GaN FETs

Devices

Part Number	Vds (V) min	Rds(on) (mΩ) typ	Rds(on) (mΩ) max	Vth (V) typ	Id (25°C) (A) max	Package	Package Variation	Datasheet	Buy Now
TP90H050WS	900	50	63	4	34	TO-247	Source	Datasheet	Buy Now
Best-in-class reliability Select your preferred supplier:

Products with markings referencing this web page are subject to one or more patents listed in Exhibit A and/or one or more of the patents listed in Exhibit B

GaN Efficiency

Need for speed—GaN operates at higher frequencies with up to 4x faster switching to lower crossover losses and increase system efficiency

Feel the power—GaN in a totem-pole configuration lowers component count and EMI filter size to deliver the same power in a smaller footprint

Smaller, lighter, cooler—Higher efficiency and increased power density means lower overall system cost