TransphormHighest Performance, Highest Reliability GaN

Transphorm GaN Field Data

Field Reliability Data

3.1

Failures per Billion Hours (FIT)

Field Hours

1.3M

Field Reliability Data

27.4

Parts per Million per Year (PPM)

Quality + Reliability (Q+R)

In January 2019, Transphorm released the industry’s first complete validation data set for high voltage GaN power FETs.

That data set includes:

  • Product Qualification results (JEDEC and AEC-Q101)
  • Extended Testing results (high voltage switching, single event burnout, HTOL, and HTGB)
  • Intrinsic Lifetime results (wear-out)
  • Extrinsic Early Lifetime Failure results (PPM and FIT)
  • Field Reliability results (PPM and FIT)

Device-specific qualification reports can be downloaded from our product pages.

Quality + Reliability Webinar

High voltage GaN transistors increase power density while reducing system size and cost. However, GaN FET validation differs from that of Silicon FETs.

Listen to Transphorm’s Q+R expert as he explains how GaN devices should be validated; the target baseline results for infant mortality, FIT rates, etc.; and how these metrics impact end systems.

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