TransphormHighest Performance, Highest Reliability GaN

TPH3208L Series

650V 110mΩ GaN FETs in PQFN

The TPH3208LDG and TPH3208LSG 650V 110mΩ Gallium Nitride (GaN) FETs are normally-off devices. They combine state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

The TPH3208L Series is offered in an industry-standard 8mm x 8mm PQFN with common drain and source with larger gate pads (LDG/LSG).

Key Specifications
VDS (V) min 650
V(TR)DSS (V) max 800
RDS(on)eff (mΩ) max* 130
QRR (nC) typ 54
QG (nC) typ 10
*Reflects both static and dynamic on-resistance

Key Features

  • JEDEC-qualified GaN technology
  • Dynamic RDS(on)eff production tested
  • Robust design, defined by
    • Intrinsic lifetime tests
    • Wide gate safety margin
    • Transient over-voltage capability
  • Very low QRR
  • Reduced crossover loss
  • RoHS-compliant and Halogen-free packaging

Key Benefits

  • Enables AC-DC bridgeless totem-pole PFC designs
    • Increased power density
    • Reduced system size and weight
    • Overall lower system cost
  • Achieves increased efficiency in both hard- and soft-switched circuits
  • Easy to drive with commonly-used gate drivers

Output Power (W)

Output Power (W)

Application Notes

AN0009: Recommended External Circuitry for Transphorm GaN FETs
AN0008: Drain Voltage and Avalanche Ratings for GaN FETs
AN0002: Characteristics of Transphorm GaN Power FETs
AN0003: Printed Circuit Board Layout and Probing for GaN FETs
AN0004: Designing Hard-switched Bridges with GaN
AN0006: VGS Transient Tolerance of Transphorm GaN FETs
AN0007: PQFN88 Lead-free 2nd Level Soldering Recommendations for Vapor Phase Reflow

Design Guides

DG004: Multi-pulse Testing for GaN Layout Verification | DG004 DSP Code
DG005: Ultrafast Overcurrent Breaker Circuit for Prototyping | DG005 Design Files

Evaluation Kits

Transphorm offers a number of GaN evaluation kits in various topologies, providing an easy-to-use platform to investigate the benefits of GaN.

Buy Now

All Transphorm devices and evaluation kits are available through Digi-Key.

  • TPH3208LDG 650V GaN FET in 8×8 PQFN (drain tab, larger gate pad)
  • TPH3208LSG 650V GaN FET in 8×8 PQFN (source tab, larger gate pad)
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