Improved Efficiency Over Silicon
Renesas is a pioneer of power Gallium Nitride High Electron Mobility Transistors (GaN HEMTs), delivering reliable, high-performance solutions across a broad range of applications, ranging from 25W to 10kW. With over 20 million high-power and low-power devices shipped, our products have collectively accumulated more than 300 billion hours of field operation. These achievements are driven by a unique and fundamentally superior architecture that harnesses GaN's inherent performance benefits.
We offer a selection of power GaN HEMT package options, including compact PQFN, robust TO-leaded, and various surface-mount packages featuring both bottom-side and top-side cooling. This versatility is unmatched by competing GaN products, which are often constrained by design limitations.
Our robust normally-off architecture, extensive package variety, and integrated low-voltage Silicon MOSFET front end enable seamless compatibility with standard Silicon drivers. These features make GaN adoption simpler and more cost-effective for system developers.
Robust and Reliable
Our highly robust GaN-on-Si Cascode technology has 300+ billion hours in the field, making us a reliable GaN supplier with a vertically integrated supply chain.
High-Performance Portfolio
650V and 700V GaN devices address the power spectrum from 25W to 10kW with 25% lower losses and improved efficiency compared to other GaN products and substrates.
Easy to Design
Easy to drive with standard gate drivers due to unique cascode structure, offering pin-to-pin compatible leaded, SMD, and top-side cooled packages and a library of design resources.
