Transphorm最高性能, 最可靠的GaN

Design Resources

Transphorm delivers an easy-to-use platform to investigate the benefits of GaN with a number of evaluation kits in various topologies.

Topology Function Part Number Power Rating Switching Frequency Range Frequency Adjustment Featured Device(s) Order Design Files
Inverter DC-AC TDINV1000P100-KIT 1000W @100kHz 50-150kHz Programmable TPH3206PSB Order Now
Firmware files:
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Inverter DC-AC TDINV3000W050-KIT 3000W @50kHz 50-150kHz Programmable TP65H050WS Order Now
Firmware files:
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Half-bridge synchronous
buck or boost
DC-DC TDHB-65H070L-DC 1200W @100kHz 50-300kHz Variable TP65H070L Order Now
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Half-bridge synchronous
buck or boost
DC-DC TDHBG1200DC100-KIT 1200W @100kHz 50-300kHz Variable TP65H070LDG/LSG Order Now
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Half-bridge synchronous
buck or boost
DC-DC TDHBG2500P100-KIT 2500W @100kHz 50-300kHz Variable TPH3212PS Order Now
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Inverter DC-AC TDINV3500P100-KIT 3500W @100kHz 50-150kHz Programmable TP90H180PS Order Now
Firmware files:
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Totem-pole PFC AC-DC TDTTP2500P100-KIT 2500W @100kHz 100kHz Fixed TPH3212PS Order Now
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Totem-pole PFC AC-DC TDTTP4000W066B-KIT 4000W @66kHz 66kHz Fixed TP65H035WS Order Now
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Product & Design Inquiries »

SPICE model for TPH3202Px/Lx (600V, 290mΩ) | v 2.0
SPICE model for TPH3206PxB/LxB (600V, 150mΩ) | v 2.0
SPICE model for TPH3208PS/Lxx (650V, 110mΩ) | v 2.0
SPICE model for TP65H150LSG (650V, 150mΩ) | v 1.0
SPICE model for TPH3212PS (650V, 72mΩ) | v 2.0
SPICE model for TPH3205WSB/WSBQA (650V, 49mΩ) | v 2.3
SPICE model for TPH3207WS (650V, 35mΩ) | v 2.2
SPICE model for TP65H070LxG (650V, 70mΩ) | v 0.1
SPICE model for TP65H050WS (650V, 50mΩ) | v 1.0
SPICE model for TP65H035WS (650V, 35mΩ) | v 1.0
SPICE model for TP90H180PS (900V, 170mΩ) | v 1.0
SPICE model for TP90H050WS (900V, 50mΩ) | v 1.0
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Zhan Wang, Yifeng Wu, Jim Honea, Liang Zhou, Paralleling GaN HEMTs for Diode-free Bridge Power Converters, Dec 2018

Barr, R., Haller, J., Shono, K., Georgieva, E., McKay, J., Smith, P., Smith, K., Rakesh, L., Yifeng, Y., High Voltage GaN Switch Reliability, Nov 2018

P. Parikha, Y. Wua, L. Shena, R. Barra, S. Chowdhurya, J. Grittersa, S. Yea a, P. Smitha, L. McCarthya, R. Birkhahna, M. Moorea, J. McKaya, H. Clementa, U. Mishraa, R. Lala, P. Zuka, T. Hosodab, K. Shonob, K. Imanishib, Y. Asaib, GaN Power Commercialization with Highest Quality-Highest Reliability 650V HEMTs-Requirements, Successes and Challenges, Aug 2018

Parikh, Primit; Smith, Kurt; Barr, Ronald; et al., 650 Volt GaN Commercialization Reaches Automotive Standards, ECS Transactions, September 2017

Parikh, Primit, Driving the Adoption of High Voltage Gallium Nitride Field-Effect Transistors [Expert View], IEEE Power Electronics Magazine, September, 2017

Huang, Zan; Cuadra, Jason, Preventing GaN Device VHF Oscillation, APEC 2017 Industry Session, March, 2017

Zuk, Philip; Campeau, Gaetan, How to Design with GaN in Under an Hour, APEC 2017 Exhibitor Session, March 2017

Smith, Kurt; Barr, Ronald, Reliability Lifecycle of GaN Power Devices, white paper, March 2017

Wang, Zhan; Wu, Yifeng, 99% Efficiency True-Bridgeless Totem-Pole PFC Based on GaN HEMTs

Wang, Zhan; Honea, Jim; Wu, Yifeng, Design and Implementation of a High-efficiency Three-level Inverter Using GaN HEMTs, May 2015 (requires IEEE access)

Zhou, Liang; Wu, Yifeng; Honea, Jim; Wang, Zhan, High-efficiency True Bridgeless Totem Pole PFC based on GaN HEMT: Design Challenges and Cost-effective Solutions, May 2015 (requires IEEE access)

Wang, Zhan; Wu, Yifeng; Honea, Jim; Zhou, Liang, Paralleling GaN HEMTs for diode-free bridge power converters, Mar 2015

Kikkawa, T., et al, 600V JEDEC-qualified Highly-reliable GaN HEMTs on Si Substrates, Dec 2014 (requires IEEE access)

Wu, Yifeng; Guerrero, Jose; McKay, Jim; Smith, Kurt, Advances in reliability and operation space of high-voltage GaN power devices on Si substrates, Oct 2014 (requires IEEE access)

Wang, Zhan; Honea, Jim; Yuxiang Shi; Hui Li, Investigation of driver circuits for GaN HEMTs in leaded packages, Oct 2014

Wu, Y.; Gritters, J.; Shen, L.; Smith, R.P.; Swenson, B., kV-class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800V and 100kHz, June 2014 (requires IEEE access)

Wu, Y.; Gritters, J.; Shen, L.; Smith, R.P.; McKay, J.; Barr, R.; Birkhahn, R., Performance and Robustness of First Generation 600V GaN-on-Si Power Transistors, Oct 2013 (requires IEEE access)

Parikh, Primit; Wu, Yifeng; Shen, Likun, Commercialization of High 600V GaN-on-Silicon Power Devices, May 2013 (requires IEEE access)

Wu, Yifeng, GaN Offers Advantages to Future HEV, March 2013

Wu, Y.; Kebort, D.; Guerrero, J.; Yea, S.; Honea, J.; Shirabe, K.; Kang, J., High-Frequency, GaN Diode-Free Motor Drive Inverter with Pure Sine Wave Output, Oct 2012

Shirabe, Kohei; Swamy, Mahesh; Kang, Jun-Koo; Hisatsune, Masaki; Wu, Yifeng; Kebort, Don; Honea, Jim, Advantages of High-frequency PWM in AC Motor Drive Applications, Sept 2012 (requires IEEE access)

Wu, Y.; Coffie, R.; Fichtenbaum, N.; Dora, Y.; Suh, C.S.; Shen, L.; Parikh, P.; Mishra, U.K., Total GaN solution to electrical power conversion, Jun 2011 (requires IEEE access)

GaN Efficiency

Need for speed—GaN operates at higher frequencies with up to 4x faster switching to lower crossover losses and increase system efficiency

Feel the power—GaN in a totem-pole configuration lowers component count and EMI filter size to deliver the same power in a smaller footprint

Smaller, lighter, cooler—Higher efficiency and increased power density means lower overall system cost

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