Transphorm最高性能, 最可靠的GaN

900V GaN FETs

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Part Number Vds (V) min Rds(on)eff (mΩ) typ Rds(on)eff (mΩ) max Id (25°C) (A) max Package Package Variation 数据表 现在购买
TP90H180PS 900 170 205 15 TO-220 Source 数据表 现在购买

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GaN Efficiency

Need for speed—GaN operates at higher frequencies with up to 4x faster switching to lower crossover losses and increase system efficiency

Feel the power—GaN in a totem-pole configuration lowers component count and EMI filter size to deliver the same power in a smaller footprint

Smaller, lighter, cooler—Higher efficiency and increased power density means lower overall system cost