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900V GaN FETs
Filters: Type: Package:
| Part Number | Vds (V) min |
Rds(on)eff (mΩ) typ |
Rds(on)eff (mΩ) max |
Id (25°C) (A) max |
Package | Package Variation |
数据表 | Buy Now |
|---|---|---|---|---|---|---|---|---|
| TP90H180PS | 900 | 170 | 205 | 15 | TO-220 | Source | 数据表 | 现在购买 |
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| Part Number | Vds (V) min |
Rds(on)eff (mΩ) typ |
Rds(on)eff (mΩ) max |
Id (25°C) (A) max |
Package | Package Variation |
数据表 | Sample Request |
|---|---|---|---|---|---|---|---|---|
| TP90H050WS** | 900 | 50 | 63 | 34 | TO-247 | Source | 数据表 | Request |
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Products with markings referencing this web page are subject to one or more patents listed in Exhibit A and/or one or more of the patents listed in Exhibit B
GaN Efficiency
Need for speed—GaN operates at higher frequencies with up to 4x faster switching to lower crossover losses and increase system efficiency
Feel the power—GaN in a totem-pole configuration lowers component count and EMI filter size to deliver the same power in a smaller footprint
Smaller, lighter, cooler—Higher efficiency and increased power density means lower overall system cost