Technical Papers
Y.-F. Wu, C. Neufeld, S. Wienecke, B. Swenson, M. Kamiyama, T. Ogino, J. Ikeda, Y. Miyazaki, T. Hosoda, K. Imanishi, R.P. Smith, Y. Huang, J. Guerrero, S. Yea, R. Birkhahn, M. Moore, S. D. Chowdhury, and L. McCarthy, Transphorm Inc., Transphorm Japan Inc., Kogyodanchi, Monden-machi, Aizu-Wakamatsu, A 650V/780A GaN Power HEMT Enabling 10kW-Class High-efficiency Power Conversion , March 2024
Alejandro Llop, Kepa Mendibil, Íñigo Peña, Salvador Ceballos, Susana Apiñániz, Tecnalia, Basque Research and Technology Alliance (BRTA), Derio, Spain. Corresponding author: Alejandro Llop A comparison among wide bandgap devices using a CLLLC bidi-rectional resonant converter , March 2024
Transphorm, Inc. The Fundamental Advantages of D-Mode GaN in Cascode Configuration, September 2023, Updated Feb 2024
Davide Bisi, Long Nguyen, Philip Zuk, Ashish Gokhale, Keith Coffey, Ted Liu, Bill Cruse, Tsutomu Hosoda, Masamichi Kamiyama, Primit Parikh, Umesh Mishra Short-Circuit Protection for GaN Power Devices with Integrated Current Limiter and Commercial Gate Driver , APEC 2022
Davide Bisi, Bill Cruse, Philip Zuk, Primit Parikh, Umesh Mishra Short-Circuit Capability with GaN HEMTs , IRPS 2022
Davide Bisi, John Gritters, Tsutomu Hosoda, Masamichi Kamiyama, Bill Cruse, YuLu Huang, Jim McKay, Geetak Gupta, Rakesh
Lal, Carl Neufeld, Philip Zuk, YiFeng Wu, Primit Parikh, Umesh Mishra Short-Circuit Capability Demonstrated for GaN Power Switches , APEC 2021
G. Gupta, M. Kanamura, B. Swenson, D. Bisi1, B. Romanczyk, C. Neufeld, S. Wienecke, T. Ogino, Y. Miyazaki, K. Imanishi, J. Ikeda, M. Kamiyama, J. Guerrero, S. Yea, M. Labrecque, R. Prejdova, B. Cruse, J. McKay, G. Bolante, Z. Wang, T. Hosoda, Y. Wu, P. Parikh, R. Lal, U. Mishra 1200V GaN Switches on Sapphire Substrate , May 2022
Davide Bisi, John Gritters, Tsutomu Hosoda, Masamichi Kamiyama, Bill Cruse, YuLu Huang, Jim McKay, Geetak Gupta, Rakesh
Lal, Carl Neufeld, Philip Zuk, YiFeng Wu, Primit Parikh, Umesh Mishra Short-Circuit Capability Demonstrated for GaN Power Switches , APEC 2021
Carl Neufeld, Yifeng Wu, Pushing the Boundaries of High Voltage GaN Power Conversion, Nov 2020
Barr, R., Haller, J., Shono, K., Georgieva, E., McKay, J., Smith, P., Smith, K., Rakesh, L., Yifeng, Y., High Voltage GaN Switch Reliability, Nov 2018
P. Parikha, Y. Wua, L. Shena, R. Barra, S. Chowdhurya, J. Grittersa, S. Yea a, P. Smitha, L. McCarthya, R. Birkhahna, M. Moorea, J. McKaya, H. Clementa, U. Mishraa, R. Lala, P. Zuka, T. Hosodab, K. Shonob, K. Imanishib, Y. Asaib, GaN Power Commercialization with Highest Quality-Highest Reliability 650V HEMTs-Requirements, Successes and Challenges, Aug 2018
Parikh, Primit; Smith, Kurt; Barr, Ronald; et al., 650 Volt GaN Commercialization Reaches Automotive Standards, ECS Transactions, September 2017
Parikh, Primit, Driving the Adoption of High Voltage Gallium Nitride Field-Effect Transistors [Expert View], IEEE Power Electronics Magazine, September, 2017
Huang, Zan; Cuadra, Jason, Preventing GaN Device VHF Oscillation, APEC 2017 Industry Session, March, 2017
Zuk, Philip; Campeau, Gaetan, How to Design with GaN in Under an Hour, APEC 2017 Exhibitor Session, March 2017
Smith, Kurt; Barr, Ronald, Reliability Lifecycle of GaN Power Devices, white paper, March 2017
Wang, Zhan; Wu, Yifeng, 99% Efficiency True-Bridgeless Totem-Pole PFC Based on GaN HEMTs
Wang, Zhan; Honea, Jim; Wu, Yifeng, Design and Implementation of a High-efficiency Three-level Inverter Using GaN HEMTs, May 2015 (requires IEEE access)
Zhou, Liang; Wu, Yifeng; Honea, Jim; Wang, Zhan, High-efficiency True Bridgeless Totem Pole PFC based on GaN HEMT: Design Challenges and Cost-effective Solutions, May 2015 (requires IEEE access)
Wang, Zhan; Wu, Yifeng; Honea, Jim; Zhou, Liang, Paralleling GaN HEMTs for diode-free bridge power converters, Mar 2015
Kikkawa, T., et al, 600V JEDEC-qualified Highly-reliable GaN HEMTs on Si Substrates, Dec 2014 (requires IEEE access)
Wu, Yifeng; Guerrero, Jose; McKay, Jim; Smith, Kurt, Advances in reliability and operation space of high-voltage GaN power devices on Si substrates, Oct 2014 (requires IEEE access)
Wang, Zhan; Honea, Jim; Yuxiang Shi; Hui Li, Investigation of driver circuits for GaN HEMTs in leaded packages, Oct 2014
Wu, Y.; Gritters, J.; Shen, L.; Smith, R.P.; Swenson, B., kV-class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800V and 100kHz, June 2014 (requires IEEE access)
Wu, Y.; Gritters, J.; Shen, L.; Smith, R.P.; McKay, J.; Barr, R.; Birkhahn, R., Performance and Robustness of First Generation 600V GaN-on-Si Power Transistors, Oct 2013 (requires IEEE access)
Parikh, Primit; Wu, Yifeng; Shen, Likun, Commercialization of High 600V GaN-on-Silicon Power Devices, May 2013 (requires IEEE access)
Wu, Yifeng, GaN Offers Advantages to Future HEV, March 2013
Wu, Y.; Kebort, D.; Guerrero, J.; Yea, S.; Honea, J.; Shirabe, K.; Kang, J., High-Frequency, GaN Diode-Free Motor Drive Inverter with Pure Sine Wave Output, Oct 2012
Shirabe, Kohei; Swamy, Mahesh; Kang, Jun-Koo; Hisatsune, Masaki; Wu, Yifeng; Kebort, Don; Honea, Jim, Advantages of High-frequency PWM in AC Motor Drive Applications, Sept 2012 (requires IEEE access)
Wu, Y.; Coffie, R.; Fichtenbaum, N.; Dora, Y.; Suh, C.S.; Shen, L.; Parikh, P.; Mishra, U.K., Total GaN solution to electrical power conversion, Jun 2011 (requires IEEE access)
